Metrology capabilities and needs for 7nm and 5nm logic nodes

Bunday, Benjamin; Solecky, Eric; Vaid, Alok; Bello, A. F.; Dai, Xintuo

doi:10.1117/12.2260870

Cited by 20 publications

(19 citation statements)

References 26 publications

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“…Nano-metrology is the only effective method that ensures the reliability and consistency of nano-manufacturing [1][2][3]. Compared with other techniques such as scanning electron microscopy (SEM), atomic force microscopy (AFM) [4], and near-field scanning optical microscope (NSOM) [5], optical scatterometry [6,7], also known as optical critical dimension metrology or optical critical dimension (OCD) metrology, is more suitable for monitoring, assessing, and optimizing the nano-manufacturing processes due to its advantages of being non-contact, non-destructive, low in cost, and easy to integrate, etc.…”

Section: Introductionmentioning

confidence: 99%

Dependence-Analysis-Based Data-Refinement in Optical Scatterometry for Fast Nanostructure Reconstruction

et al. 2019

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Optical scatterometry is known as a powerful tool for nanostructure reconstruction due to its advantages of being non-contact, non-destructive, low cost, and easy to integrate. As a typical model-based method, it usually makes use of abundant measured data for structural profile reconstruction, on the other hand, too much redundant information significantly degrades the efficiency in profile reconstruction. We propose a method based on dependence analysis to identify and then eliminate the measurement configurations with redundant information. Our experiments demonstrated the capability of the proposed method in an optimized selection of a subset of measurement wavelengths that contained sufficient information for profile reconstruction and strikingly improved the profile reconstruction efficiency without sacrificing accuracy, compared with the primitive approach, by making use of the whole spectrum.

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Section: Introductionmentioning

confidence: 99%

Dependence-Analysis-Based Data-Refinement in Optical Scatterometry for Fast Nanostructure Reconstruction

et al. 2019

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“…[8][9][10] Along with the advantages of optical scatterometry, there are some challenges or limitations to this technique. 11,12 First, the parameter correlation deserves special attention. Large parameter correlation increases the measurement uncertainty and makes the solution of the inverse problem apt to fall into local minima.…”

Section: Introductionmentioning

confidence: 99%

Development of a tomographic Mueller-matrix scatterometer for nanostructure metrology

Tan

Chen

et al. 2018

Review of Scientific Instruments

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In this paper, we describe the development of a novel instrument, tentatively called tomographic Mueller-matrix scatterometer (TMS), which enables illuminating sequentially a sample by a plane wave with varying illumination directions and recording, for each illumination, the polarized scattered field along various directions of observation in the form of scattering Mueller matrices. The incidence angle is varied from 0° to 65.6° with the rotation of a flat mirror that changes the position of the focal point of a light beam on the back focal plane of a high numerical aperture objective lens. The scattering Mueller matrices are collected over a wide range of scattering angles (0°-67°) and azimuthal angles (0°-360°). The developed instrument was then applied for the measurement of nanostructures in combination with an inverse scattering problem solving technique. The experiment performed on a periodic nanostructure preliminarily demonstrates the performance of TMS as well as its potential in nanostructure metrology. It is expected that the TMS would be a powerful tool for characterizing the polarized scattered-field distributions and measuring nanostructures in nanomanufacturing.

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“…The current state and future needs of the complementary optical, scanned probe, and electron-beam metrology ecosystem for advanced IC fabrication are detailed by Bunday et al 3 Additionally, entirely new computing paradigms, such as neuromorphic computing, 7 that may permit progress to energy-efficient computation at the Landauer limit 1 of k Tln2 per bit (2.8 × 10 −21 J at 300 K), 2,8,9 drive the exploration of a zoo of new device types. 10 Many of these devices manipulate certain properties – state variables – other than an electronic charge, such as the electric or magnetic dipole, orbital state, or atomic configuration 2 .…”

Section: Introductionmentioning

confidence: 99%

Research Update: Electron beam-based metrology after CMOS

et al. 2018

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The magnitudes of the challenges facing electron-based metrology for post-CMOS technology are reviewed. Directed selfassembly, nanophotonics/plasmonics, and resistive switches and selectors, are examined as exemplars of important post-CMOS technologies. Materials, devices, and architectures emerging from these technologies pose new metrology requirements: defect detection, possibly subsurface, in soft materials, accurate measurement of size, shape, and roughness of structures for nanophotonic devices, contamination-free measurement of surface-sensitive structures, and identification of subtle structural, chemical, or electronic changes of state associated with switching in non-volatile memory elements. Electron-beam techniques are examined in the light of these emerging requirements. The strong electron-matter interaction provides measurable signal from small sample features, rendering electron-beam methods more suitable than most for nanometer-scale metrology, but as is to be expected, solutions to many of the measurement challenges are yet to be demonstrated. The seeds of possible solutions are identified when they are available.

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Metrology capabilities and needs for 7nm and 5nm logic nodes

Cited by 20 publications

References 26 publications

Dependence-Analysis-Based Data-Refinement in Optical Scatterometry for Fast Nanostructure Reconstruction

Dependence-Analysis-Based Data-Refinement in Optical Scatterometry for Fast Nanostructure Reconstruction

Development of a tomographic Mueller-matrix scatterometer for nanostructure metrology

Research Update: Electron beam-based metrology after CMOS

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