Metrology and inspection required for next generation lithography

Asano, Masafumi; Yoshikawa, Ryoji; Hirano, Takashi; Abe, Hikaru; Matsuki, Kazuto; Tsuda, Hitoshi; Komori, Mika; Ojima, Tomoko; Yonemitsu, Hiroki; Kawamoto, Akiko

doi:10.7567/jjap.56.06ga01

Cited by 9 publications

(2 citation statements)

References 56 publications

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“…Improvements of as much as 4 nm for top width after OCD hybridization with AFM are common 138 . Other combinations include CD-SAXS and SEM 53, 140 ; SEM and OCD 140, 141 . ; AFM and SEM 123 .…”

Section: Hybrid or Combined Metrologymentioning

confidence: 99%

Metrology for the next generation of semiconductor devices

Badaroglu²,

et al. 2018

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The semiconductor industry continues to produce ever smaller devices that are ever more complex in shape and contain ever more types of materials. The ultimate sizes and functionality of these new devices will be affected by fundamental and engineering limits such as heat dissipation, carrier mobility and fault tolerance thresholds. At present, it is unclear which are the best measurement methods needed to evaluate the nanometre-scale features of such devices and how the fundamental limits will affect the required metrology. Here, we review state-of-the-art dimensional metrology methods for integrated circuits, considering the advantages, limitations and potential improvements of the various approaches. We describe how integrated circuit device design and industry requirements will affect lithography options and consequently metrology requirements. We also discuss potentially powerful emerging technologies and highlight measurement problems that at present have no obvious solution.

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Section: Hybrid or Combined Metrologymentioning

confidence: 99%

Metrology for the next generation of semiconductor devices

Badaroglu²,

et al. 2018

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“…The next generation computing devices that evolve towards mobile-oriented, cloud-based, and high speed-driven network environments require manufacturing of ever-decreasing features to meet the demands of advanced technologies including integrated circuits based on advanced transistors logic gates and quantum computing devices based on qubit logic gates [1][2][3]. Dimensional metrology for characterization of these nanoscale features occupies an essential place in the manufacturing process of those nanoscale devices [4,5]. Optical dimension measurement methods have unique benefits of nondestructive character, higher measurement speed, and relatively lower cost, comparing to other major measurement methods such as scanning electron microscopy (SEM) or atomic force microscopy (AFM) [6,7].…”

Section: Introductionmentioning

confidence: 99%

Effect of partial coherence on dimensional measurement sensitivity for DUV scatterfield imaging microscopy

et al. 2019

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Optical scatterfield imaging microscopy technique which has the capability of controlling scattered fields in the imaging mode is useful for quantitative nanoscale dimensional metrology that yields precise characterization of nanoscale features for semiconductor device manufacturing process control. To increase the sensitivity in the metrology using this method, it is required to optimize illumination and collection optics that enhance scatterfield signals from the nanoscale targets. Partial coherence of the optical imaging system is used not only for enhancing image quality in the traditional microscopy or lithography but also for increasing the sensitivity of the scatterfield imaging microscopy. This paper presents an empirical investigation of the effect of partial coherence on measurement sensitivity using a deep ultraviolet scatterfield imaging microscope platform that uses a 193 nm excimer laser as a source and a conjugate back focal plane as a unit for controlling partial coherence. Dimensional measurement sensitivity is assessed through analyzing scatterfield images measured at the edge area of periodic multiline structures with nominal linewidths ranging 44-80 nm on a Molybdenum Silicide (MoSi) photomask. Intensities scattered from the targets under the illuminations with various partial coherence factors and two orthogonal polarizations are assessed with respect to sensitivity coefficient. The optimization of partial coherence factor for the target dimension is discussed through the sensitivity coefficient maps.

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Indirect Measurement Methods for Quality and Process Control in Nanomanufacturing

Fan

Gao

2022

Nanomanuf Metrol

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Rapid advancement over the past decades in nanomanufacturing has led to the realization of a broad range of nanostructures such as nanoparticles, nanotubes, and nanowires. The unique mechanical, chemical, and electrical properties of these nanostructures have made them increasingly desired as key components in industrial and commercial applications. As the geometric dimension of nano-manufactured products is on the sub-micron to nanometer scale, different mechanisms and effects are involved in the nanomanufacturing process as compared to those for macro-scale manufacturing. Although direct measurement methods using atomic force microscopy and electron beam microscopy can determine the dimensions of the nano structure with high accuracy, these methods are not suited for online process control and quality assurance. In comparison, indirect measurement methods analyze in-process parameters as the basis for inferring the dimensional variations in the nano products, thereby enabling online feedback for process control and quality assurance. This paper provides a comprehensive review of relevant indirect measurement methods, starting with their respective working principles, and subsequently discussing their characteristics and applications in terms of two different approaches: data-based and physics-based methods. Relevant mathematical and physics models for each of the methods are summarized, together with the associated effect of key process parameters on the quality of the final product. Based on the comprehensive literature conducted, it was found that: (1) indirect measurement, especially the data-based method, plays a critical role when it comes to online process control and quality assurance in nanomanufacturing, because of the short processing time compared to the direct method, and (2) physics-based method is providing a way to optimize the process set up for desired geometrical dimensions.

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Metrology and inspection required for next generation lithography

Cited by 9 publications

References 56 publications

Metrology for the next generation of semiconductor devices

Metrology for the next generation of semiconductor devices

Effect of partial coherence on dimensional measurement sensitivity for DUV scatterfield imaging microscopy

Indirect Measurement Methods for Quality and Process Control in Nanomanufacturing

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