Abstract:Wafer inspection schemes for next generation lithography (NGL) will play a key role in controlling defect mechanisms and maintaining an acceptable yield. Developing these wafer inspection schemes will require characterization and optimization of DUV wavelength illumination at high numerical apertures (greater than 0.9) to detect defects that may be a fraction of Ihe design rule. Using wafer inspection test benches that provide the flexibility for various illumination polarizations, numerical apertures, scannin… Show more
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