Methylene-bridged carbosilanes and polycarbosilanes as precursors to silicon carbide—from ceramic composites to SiC nanomaterials

Qing-min, Cheng; Interrante, L. V.; Lienhard, Michael; Shen, Qionghua; Wu, Ziling

doi:10.1016/j.jeurceramsoc.2004.08.005

Cited by 49 publications

(26 citation statements)

References 51 publications

(32 reference statements)

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“…[6] A wide range of techniques have been developed for the synthesis of SiC-based 1D NCs that are based mainly on vapor-solid (VS) or vapor-liquid-solid (VLS) growth mechanisms. [7][8][9][10][11][12][13] In these reports, SiC NWs are coated by a thin silicon oxide (or suboxide) layer, forming SiC@SiO 2 NCs. The formation of this layer, which is important for allowing further chemical surface functionalization and enhancing the transport properties of the NWs, is discussed in related papers.…”

Section: Introductionmentioning

confidence: 99%

Very Long SiC‐Based Coaxial Nanocables with Tunable Chemical Composition

Bechelany

Brioude

Stadelmann

et al. 2007

Adv Funct Materials

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We present a simple process for the fabrication of very long SiC‐based coaxial nanocables (NCs). The versatility of this technique is confirmed by the ability to change the chemical composition of the NC outer layers from silica to carbon and boron nitride. The NCs consist of a SiC core approximately 30 nm in diameter with lengths up to several hundred of nanometers. The thickness of the coating is in the range 2–10 nm. The morphology and structural characterization of the NCs is investigated by scanning electron microscopy (SEM) and high‐resolution transmission electron microscopy (HRTEM), respectively, and their chemical composition is probed by electron energy loss spectroscopy (EELS). A vapor–solid growth mechanism is proposed to explain the growth of SiC‐based NCs of various chemical compositions, depending on the chemical nature of the vapor phase. Because of the large quantity of very long and interlaced NCs produced during the synthesis, the macroscopic aspect of the as‐grown material is like a self‐supported felt.

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Section: Introductionmentioning

confidence: 99%

Very Long SiC‐Based Coaxial Nanocables with Tunable Chemical Composition

Bechelany

Brioude

Stadelmann

et al. 2007

Adv Funct Materials

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“…where d i is the density of the precursor (Table 2), V i is the total volume of liquid precursor injected, M i is its molecular weight (90 g·mol −1 for DSB and the arbitrary value M n = 2000 for PSE that is a mixture of [42,43] linear, branched and cyclic oligomers according to [13,14,22]) and t is the duration of the CVD run. Therefore, using pure precursors, the molecular flow rate of precursors was 1.98 * 10 , which is 18 times lower than using the pure PSE precursor.…”

Section: Methodsmentioning

confidence: 99%

“…For instance, 1,3-disilabutane (DSB) [11,12] and polysilaethylene (PSE) [13,14] have been used in low pressure CVD processes in the temperature ranges of 923-1198 K and 1148-1273 K, respectively, and using inert gas (N 2 or Ar) or H 2 as carrier gas (Table 1). These two precursors are liquid at room temperature and exhibit a sufficient volatility, although relatively low in the case of PSE when the number of [Si\C] units is near 8 ( Table 2).…”

Section: Introductionmentioning

confidence: 99%

“…These two precursors are liquid at room temperature and exhibit a sufficient volatility, although relatively low in the case of PSE when the number of [Si\C] units is near 8 ( Table 2). Indeed, this last compound is a mixture of linear, branched and cyclic oligomers [13,14]. The low volatility limits the flow rate of precursor in the gas phase and then the growth rate of the CVD coatings.…”

Section: Introductionmentioning

confidence: 99%

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SiC coatings grown by liquid injection chemical vapor deposition using single source metal-organic precursors

Boisselier

Maury

Schuster

2013

Surface and Coatings Technology

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Frédéric Schuster. SiC coatings grown by liquid injection chemical vapor deposition using single source metal-organic precursors. Surface and Coatings Technology, Elsevier, 2013, vol. 215, pp. 152-160. 10.1016/j.surfcoat.2012 SiC coatings have been grown by direct liquid injection of organosilanes in a hot-wall chemical vapor deposition reactor (DLICVD). 1,3-disilabutane (DSB) and polysilaethylene (PSE) were used as single-source precursors. Amorphous and stoichiometric SiC coatings were deposited under low pressure on various substrates in the temperature range of 923-1073 K. Thickness gradients due to the temperature profiles and the precursor depletion were observed along the reactor axis but the thickness uniformity could be improved as a function of the deposition conditions. Growth rates as high as 90 μm·h −1 were obtained using pure precursors. The injection of PSE solutions in toluene significantly reduces the deposition rate due to the decrease of the PSE mole fraction but allows a better control of the growth rates and the microstructure of coatings. They exhibit a smooth surface morphology and a very dense structure. The films grown using pure precursors exhibit an Si:C atomic ratio equal to 1:1 while those using toluene solutions are slightly C-rich (54 at.% C). The presence of solvent vapor in the CVD reactor becomes a source of carbon contamination at deposition temperatures equal to or higher than 1073 K. The influence of the growth conditions is discussed, in particular the presence of toluene vapor.

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“…Cheng et al 20 conducted both CVD and liquid infiltration to deposit the polymeric precursor in AAO membrane, followed by pyrolysis at 1000uC under N 2 and etching with HF (49%) for 2 days, SiC nanotubes with typical outer diameter of 200-300 and 20-40 nm wall thickness were obtained. While via CVD deposition nanotube arrays having SiC 1?4 O 0?1 composition were formed, via infiltration SiC 1?3 O 0?8 bamboo-like nanotubes were obtained.…”

Section: Template Modulated Methodsmentioning

confidence: 99%

Fabrication and properties of ceramic 1D nanostructures from preceramic polymers: a review

Vakifahmetoğlu

2011

Advances in Applied Ceramics

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This paper reviews different methodologies for the fabrication of various ceramic one-dimensional (1D) nanostructures (nanotubes/fibres/wires/belts, etc.) produced by using preceramic polymers. Diverse processing approaches together with a wide range of precursor types enable the fabrication of 1D nanostructures with varied morphology, composition, purity as well as yield. The strategies used are based on three different methods; starting with the utilisation of decomposition gases which are released upon pyrolysing the preceramic polymer precursors at high temperatures, with the absence or presence of a catalytic metal source. The second is the template modulated synthesis routes (i.e. infiltration of the polymeric precursor melt or solution inside a template porosity, polymer to ceramic conversion followed by the removal of the template), and the last strategy discussed is electrospinning.

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Methylene-bridged carbosilanes and polycarbosilanes as precursors to silicon carbide—from ceramic composites to SiC nanomaterials

Cited by 49 publications

References 51 publications

Very Long SiC‐Based Coaxial Nanocables with Tunable Chemical Composition

Very Long SiC‐Based Coaxial Nanocables with Tunable Chemical Composition

SiC coatings grown by liquid injection chemical vapor deposition using single source metal-organic precursors

Fabrication and properties of ceramic 1D nanostructures from preceramic polymers: a review

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