Method of metal-insulator-semiconductor structure interface analysis

Abstract

The method of metal–insulator–semiconductor (MIS) structure interface analysis, based on applying a direct current pulse of preset amplitude to a MIS structure, is proposed. The variation of the voltage across the MIS structure is recorded while the current flows. The method allows measurement of interface characteristics such as the interface states density, the flat band voltage, the surface potential value for a given bias and the potential barrier height on the injection interface. In addition, the method enables us to determine the charge degradation parameters of the MIS structure under and after high‐field stressing. Copyright © 1999 John Wiley & Sons, Ltd.

Study of temperature dependence of positive charge generation in thin dielectric film of MOS structure under high-fields

“…Nowadays, the constant current stress technique [1,5] is widely used for studying positive charge generation in MOS structures. In this technique, a constant current pulse is applied to a MOS structure, causing the charging of structure capacitance and initiating a Fowler -Nordheim high-field tunnel electron injection.…”

“…In this technique, a constant current pulse is applied to a MOS structure, causing the charging of structure capacitance and initiating a Fowler -Nordheim high-field tunnel electron injection. Measuring the MOS structure voltage shift one can estimate the charge state change of a sample [1,5].…”

Low-temperature electrical characterization of the Ti–Si(100) interface at the p-Si/SiGe/Si–Ti structure using Hall measurement analysis

“…The precise position of the Fermi level within the band gap and thus the value of the barrier height that affects the device performance have been of great interest in electronics research. Four methods have been used basically to measure the SBH of MSC: the (I-V) characteristics in the forward direction with V > 3kT /e, the activation energy, the capacitance-voltage measurement (C-V) and photoelectric measurement techniques [1,[5][6][7][8][9]. These methods give SBH with an accuracy of ±0.02 eV at relatively high temperatures, but fail as the MSC are cooled to low temperature.…”