Method for Predicting&amp;lt;tex&amp;gt;$f_T$&amp;lt;/tex&amp;gt;for Carbon Nanotube FETs

Castro, L. C.; John, D.L.; Pulfrey, D.L.; Pourfath, Mahdi; Gehring, A. U.; Kosina, H.

doi:10.1109/tnano.2005.858603

Cited by 55 publications

(24 citation statements)

References 16 publications

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“…Extensive experiments have been performed recently to explore AC characteristics of CNTFETs [1][2][3]. Theoretical calculations of the cut-off frequency and delay time of CNTFETs have been based on the assumption of ballistic transport, which predicts THz operation [4][5][6][7]. Little, however, is known about how scattering affects the speed and high frequency performance of CNTFETs.…”

Section: Introductionmentioning

confidence: 99%

Effect of phonon scattering on intrinsic delay and cutoff frequency of carbon nanotube FETs

Yoon

Ouyang

Guo

2006

IEEE Trans. Electron Devices

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The effect of phonon scattering on the intrinsic delay and cut-off frequency of Schottky barrier CNTFETs is examined. Carriers are mostly scattered by optical and zone boundary phonons beyond the beginning of the channel. We show that the scattering has a small direct effect on the DC on-current of the CNTFET, but it results in significant decrease of intrinsic cut-off frequency and increase of intrinsic delay.

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Section: Introductionmentioning

confidence: 99%

Effect of phonon scattering on intrinsic delay and cutoff frequency of carbon nanotube FETs

Yoon

Ouyang

Guo

2006

IEEE Trans. Electron Devices

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“…3 illustrates the intrinsic parameters for our device. The oscillatory peaks in the capacitances and transconductance are related to the formation of quasi-bound states in the short channel [7,9]. With the modulation of the applied voltage, the states, indicated by the bright patches in Fig.…”

Section: Resultsmentioning

confidence: 96%

High-Frequency Capability of Schottky-Barrier Carbon Nanotube FETs

Castro

Pulfrey

John

2007

SSP

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Abstract. The high-frequency capability of carbon nanotube field-effect transistors is investigated by simulating the small-signal performance of a device with negative-barrier Schottky contacts for the source and drain, and with a small, ungated region of nanotube between the end contacts and the edge of the wrap-around gate electrode. The overall structure is shown to exhibit resonant behaviour, which leads to a significant bias dependence of the small-signal capacitances and transconductance. This could lead to high-frequency figures of merit (f T and f max ) in the terahertz regime.

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“…A five-stage ring oscillator built on a single tube has been demonstrated [38]. Theoretical works predict THz operation at the ballistic limit [9,14,[57][58][59]. In this section, we discuss our work on assessing the high-frequency performance limits at the ballistic limit and in the presence of phonon scattering.…”

Section: High-frequency Performance Limitsmentioning

confidence: 99%