Method for measuring impurity distributions in semiconductor crystals

Silicon Impurity Distribution as Revealed by Pulsed MOS C-V Measurements

“…Substituting [2] and [3] into [1] dV = dQsc (1/Co + 1/Cs) = dQsc/Cm [4] where Cm is total measured capacitance, Cs = es/W, and W is space charge width. Using the relation dQsc = q N(W)dW in [4], where N(W) is the doping concentration as a function of W, we get dV = q N (W) dW/Cm [5] But, dW = "s d(1/Cs) = ,s d(1/Cm) [6] as 1/Cs = 1/Cm-1~Co. Substituting [6] into [5] and solving for N(W), we get N (W) = 2 (qes d(1/Cm2)/dV) -1 [7] This equation shows that the doping concentration N(W) can be calculated from the slope of the 1/C 2 vs. V curve.…”

Capacitance-Voltage Measurements with a Mercury-Silicon Diode

“…They are all based on clever use of the nonlinear circuit properties incorporated in Eq. [la] to [lc], as discussed originally by Meyer and Guldbrandsen (15). The authors also use an automated instrument designed and built some years ago by Rusche (16).…”

Ionic liquid gating reveals trap-filled limit mobility in low temperature amorphous zinc oxide

“…The density of accumulated charges dependent on the active layer depth was calculated by the second-harmonic of the CV measurement at 500 Hz. [30][31][32] To determine if all trap states have been filled in a current-voltage measurement of a TFT, the TFL transition voltage (V tfl ) for a given material must be known. V tfl can be determined with capacitance/voltage (CV) measurements.…”