Ionic liquid gating reveals trap-filled limit mobility in low temperature amorphous zinc oxide

Bubel, Simon; Meyer, Sebastian; Kunze, Frederik; Chabinyc, M. L.

doi:10.1063/1.4824022

Cited by 14 publications

(13 citation statements)

References 40 publications

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“…S2(a) †] to evaluate electron transport in a-ZnO thin lms prepared with different surface coverage and morphologies. Recently Bubel et al 53 have shown that a-ZnO exhibits trap-lled limit mobility through an ionic liquid gating method. However all the mobility values presented here are below the trap-lled limit and determined using a conventional bottom-gate TFT architecture.…”

Section: Surface Coverage and Morphology Of A-zno On Ito-coated Glassmentioning

confidence: 99%

Efficient inverted bulk-heterojunction solar cells from low-temperature processing of amorphous ZnO buffer layers

et al. 2014

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Section: Surface Coverage and Morphology Of A-zno On Ito-coated Glassmentioning

confidence: 99%

Efficient inverted bulk-heterojunction solar cells from low-temperature processing of amorphous ZnO buffer layers

et al. 2014

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“…We can safely exclude possible effects of contact Schottky barrier on the observed mobility modulation considering the choice of Al electrode that has been shown to form an ohmic contact on TiO x 26,29,33,37,40 and the negligible barrier height lowering effected by gate bias (Supplementary Note 1). The origin of gateinduced mobility modulation has been previously speculated to be related with the sub-bandgap trap states (localized tail states) 41,42 , typically present near the conduction band edge (E c ) of amorphous semiconductors with an exponential decrease in their density of states. Particularly, Lee et al have proposed a power law dependence of the saturation-regime μ FE on V g with the following expression 16,42 :…”

Section: Resultsmentioning

confidence: 99%

Large mobility modulation in ultrathin amorphous titanium oxide transistors

et al. 2020

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Recently, ultrathin metal-oxide thin film transistors (TFTs) have shown very high on-off ratio and ultra-sharp subthreshold swing, making them promising candidates for applications beyond conventional large-area electronics. While the on-off operation in typical TFTs results primarily from the modulation of charge carrier density by gate voltage, the high on-off ratio in ultrathin oxide TFTs can be associated with a large carrier mobility modulation, whose origin remains unknown. We investigate 3.5 nm-thick TiOx-based ultrathin TFTs exhibiting on-off ratio of ~106, predominantly driven by ~6-decade gate-induced mobility modulation. The power law behavior of the mobility features two regimes, with a very high exponent at low gate voltages, unprecedented for oxide TFTs. We find that this phenomenon is well explained by the presence of high-density tail states near the conduction band edge, which supports carrier transport via variable range hopping. The observed two-exponent regimes reflect the bi-exponential distribution of the density of band-tail states. This improved understanding would be significant in fabricating high-performance ultrathin oxide devices.

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“…The thickness of spin‐coated oxide films depends on the speed, acceleration, steps, time, and repetition number of the spinning process and the solution's viscosity and molar concentration. According to previous studies, the minimum achievable film thickness and viscosity range of available inks by spin‐coating are 5 nm and 1–5200 cP, respectively . However, spin‐coating has several disadvantages in terms of the material waste associated with the ink, inapplicability to large‐area or curved substrates, and a low throughput.…”

Section: Fundamentals Of the Solution Processing Technique For Oxide mentioning

confidence: 99%

A Review of Low‐Temperature Solution‐Processed Metal Oxide Thin‐Film Transistors for Flexible Electronics

Park

Kang

Kim

2019

Adv Funct Materials

300

211

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Solution processing, including printing technology, is a promising technique for oxide thin-film transistor (TFTs) fabrication because it tends to be a costeffective process with high composition controllability and high throughput. However, solution-processed oxide TFTs are limited by low-performance and stability issues, which require high-temperature annealing. This high thermal budget in the fabrication process inhibits oxide TFTs from being applied to flexible electronics. There have been numerous attempts to promote the desired electrical characteristics of solution-processed oxide TFTs at lower fabrication temperatures. Recent techniques for achieving low-temperature (<350 °C) solution-processed and printed oxide TFTs, in terms of the materials, processes, and structural engineering methods currently in use are reviewed. Moreover, the core techniques for both n-type and p-type oxidebased channel layers, gate dielectric layers, and electrode layers in oxide TFTs are addressed. Finally, various multifunctional and emerging applications based on low-temperature solution-processed oxide TFTs are introduced and future outlooks for this highly promising research are suggested.

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Ionic liquid gating reveals trap-filled limit mobility in low temperature amorphous zinc oxide

Cited by 14 publications

References 40 publications

Efficient inverted bulk-heterojunction solar cells from low-temperature processing of amorphous ZnO buffer layers

Efficient inverted bulk-heterojunction solar cells from low-temperature processing of amorphous ZnO buffer layers

Large mobility modulation in ultrathin amorphous titanium oxide transistors

A Review of Low‐Temperature Solution‐Processed Metal Oxide Thin‐Film Transistors for Flexible Electronics

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