Metastable phases in vacuum-evaporated Cr-Ni thin films

Bîrjega, M.I.; Popescu-Pogrion, N.; Sârbu, C.; Rǎu, S.

doi:10.1016/0040-6090(76)90156-5

“…The electrical properties and the stability of NiCr resistor films are considerably influenced by physical and chemical interactions between film and substrate surface. 5,16,8 Thus, the yield of production greatly depends upon the uniformity and reproducibility of substrate properties, such as surface roughness ( Figures 8, 9), texture, flatness, chemical composition, etc. Any choice of substrate material for a particular application is determined by such quite different aspects as power dissipation, required stability, TCR, costs, etc.…”

Section: Substratesmentioning

confidence: 99%

“…This wide immiscibility, the relatively deep eutectic and the capability of NiCr to form metallic compounds are reported to favour the appearance of metastable phases. 8,9 In Figure 7 star-shaped marks show the compositions and substrate temperatures at which metastable phases have been detected. It should be mentioned, that their formation is limited to very particular conditions (substrate type and temperature, deposition rate, film thickness, pressure, etc); therefore, in practice, in many cases they don't occur.…”

Section: Introductionmentioning

confidence: 99%

Nichrome Thin Film Technology and its Application

Rölke

¹

1981

Active and Passive Electronic Components

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NiCr thin film resistors are widely used in the current resistor technology. Ranging from discrete resistors up to highest performance hybrid integrated circuits, vacuum deposited NiCr alloys cover extreme areas of application. Depending upon NiCr composition, process parameters, substrate and conductor materials, resistors with extremely low temperature coefficient of resistance (TCR) and high stability, low noise and distortion can be produced. NiCr resistors therefore offer particular advantages for applications with special demand for high stability as well as low TCR-like selected circuits for measuring equipment, data processing, telecommunication, etc.

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“…This wide immiscibility, the relatively deep eutectic and the capability of NiCr to form metallic compounds are reported to favour the appearance of metastable phases. 8,9 In Figure 7 (Figure 9), low TCR, high resistor stability, low thermal conductivity, low mechanical strength, fairly low costs.…”

mentioning

confidence: 99%

Nichrome thin film technology and its application

1983

Microelectronics Journal

1

0

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NiCr thin film resistors are widely used in the current resistor technology. Ranging from discrete resistors up to highest performance hybrid integrated circuits, vacuum deposited NiCr alloys cover extreme areas of application. Depending upon NiCr composition, process parameters, substrate and conductor materials, resistors with extremely low temperature coefficient of resistance (TCR) and high stability, low noise and distortion can be produced. NiCr resistors therefore offer particular advantages for applications with special demand for high stability as well as low TCR-like selected circuits for measuring equipment, data processing, telecommunication, etc.

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Modifications test of vacuum deposition Ni/Cr films with Mn and Si for thin film resistors

Schippel

¹

1980

Cryst Res and Technol

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Dedicated to Professor G. BECHERER on the occasion of his 65th birthday For producing Ni/Cr thin film resistors an Si addition would be especially suitable t o reduce the TCR, as Si forms several phases with Ni and Cr. By evaporating powder mixtures deposition thin films were produced with constant Cr portions of 20 at.%, 30 at.% and 40 at.% and from 5 to 50 at.% Si or Mn, rest Ni. Whereas the layers containing Mn have an exclusively positive TCR, there is a shift to negative TCR in the layers containing much Xi.Zur Herstellung von Metallfilmwiderstlnden wiire ein Zusatz von Si zur Senkung des TK besonders geeignet, da Si mit Ni und Cr mehrere Phasen hildet. Durch Verdampfen von Pulvermischungen wurden Schichten mit konstantem Cr-Anteil von 20 At.%, 30At.76 und 40At.y0 und 5At% bis 50At% Si oder Mn, Rest Ni, hergestellt. Wiihrend der TK der Mn-haltigen Schichten ausschliefilich positiv ist, tritt bei den stark Si-haltigen Schichten ein ubergang zum negativen TK auf.

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Metastable phases in vacuum-evaporated Cr-Ni thin films

Cited by 15 publications

References 10 publications

Nichrome Thin Film Technology and its Application

Nichrome Thin Film Technology and its Application

Nichrome thin film technology and its application

Modifications test of vacuum deposition Ni/Cr films with Mn and Si for thin film resistors

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