Metastable excited states of a closed quantum dot with high sensitivity to infrared photons

An, Zhenghua; Ueda, Taisei; Komiyama, S.; Hirakawa, K.

doi:10.1103/physrevb.75.085417

Cited by 35 publications

(24 citation statements)

References 13 publications

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“…2b) in the two crystal wafers grown by molecularbeam epitaxy. The crystals have a structure similar to those reported in the previous works [10][11][12][13] (Fig. 1a); viz., the 10-nm-thick upper quantum well lies at 100 nm beneath the surface.…”

Section: Experimental Methodssupporting

confidence: 55%

“…1b: In short, the device works as a photo-sensitive field effective transistor with a photo-active floating gate served by the upper QW. The unit increment of current I e induced by one photohole in the isolated upper QW (area of L x W) is given by [12,14,15]:…”

mentioning

confidence: 99%

“…Recently, novel sensitive detectors called charge sensitive infrared phototransistors (CSIPs) [10][11][12][13][14][15] have been developed. The detectors utilize a double-quantum well (DQW) structure ( Fig.…”

mentioning

confidence: 99%

See 2 more Smart Citations

Temperature Dependence of Novel Single-Photon Detectors in the Long-Wavelength Infrared Range

Ueda

Komiyama

2010

J Infrared Milli Terahz Waves

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Novel single-photon detectors, called Charge-sensitive Infrared Phototransistor (CSIP), have been developed in the long wavelength infrared (LWIR) range. The devices are fabricated in GaAs/AlGaAs double-quantum-well (DQW) structure, and do not require ultralow temperatures (T<1 K) for operation. Figures of merit are determined in a T-range of 4.2 K∼30 K by using a homemade all-cryogenic spectrometer. We found that the photosignal persists up to around 30 K. Excellent specific detectivity D * =9.6×10 14 cm Hz 1/2 /W and noise equivalent power NEP=8.3×10 −19 W/Hz 1/2 are derived up to T=23 K. The dynamic range of detection exceeds 10 6 , roughly ranging from attowatt to picowatt levels. These values are by a few orders of magnitude higher than that of the state-of-the-art values of other detectors. Simple planar structure of CSIPs is feasible for array fabrication and will make it possible to monolithically integrate with reading circuit. CSIPs are, therefore, not only extremely sensitive but also suitable for practical use in wide ranging applications.

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Section: Experimental Methodssupporting

confidence: 55%

mentioning

confidence: 99%

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Temperature Dependence of Novel Single-Photon Detectors in the Long-Wavelength Infrared Range

Ueda

Komiyama

2010

J Infrared Milli Terahz Waves

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“…(We neglect here the influence of the quantum well absorption on electromagnetic field distribution. This approximation validates since the absorption is typically less than 10% [17]. Future work will consider this second-order effect and discuss the possibility in entering strong light-matter coupling region).…”

Section: Structure and Simulation Methodsmentioning

confidence: 80%

“…The functionality of this single quantum well photodetector has been demonstrated previously [16] and is very promising for high-performance photo-detection (ultimately counting individual photons despite small photon energy in the infrared/terahertz region) [17]. However, this device currently suffers from low photo-coupling efficiency thereby needing optimization of the plasmonic couplers.…”

Section: Structure and Simulation Methodsmentioning

confidence: 99%

Optimization of Optoelectronic Plasmonic Structures

Wang

et al. 2011

Plasmonics

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We discuss the interplay between surface plasmon polaritons (SPPs) and localized shape resonances (LSRs) in a plasmonic structure working as a photocoupler for a GaAs quantum well photodetector. For a targeted electronic inter-subband transition inside the quantum well, maximum photon absorption is found by compromising two effects: the mode overlapping with incident light and the lifetime of the resonant photons. Under the optimal conditions, the LSR mediates the coupling between the incident light and plasmonic structure while the SPP provides long-lived resonance which is limited ultimately by metal loss. The present work provides insight to the design of plasmonic photo-couplers in semiconductor optoelectronic applications.

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Single Photon Detection in the Long Wave Infrared

Ueda

Hirakawa

et al.

Springer Proceedings in Physics

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Metastable excited states of a closed quantum dot with high sensitivity to infrared photons

Cited by 35 publications

References 13 publications

Temperature Dependence of Novel Single-Photon Detectors in the Long-Wavelength Infrared Range

Temperature Dependence of Novel Single-Photon Detectors in the Long-Wavelength Infrared Range

Optimization of Optoelectronic Plasmonic Structures

Single Photon Detection in the Long Wave Infrared

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