Metalorganic Vapor Phase Epitaxial Growth of GaNAs Using Tertiarybutylarsine (TBA) and Dimethylhydrazine (DMHy)

Abstract

GaNAs alloys were successfully grown on GaAs substrates by low-pressure metalorganic vapor phase epitaxy (MOVPE) with all organometallic sources of triethylgallium (TEG), tertiarybutylarsine (TBA), and dimethylhydrazine (DMHy). For nitrogen, the desorption coefficient of 30 kcal/mol was derived from the nitrogen incorporation dependence on growth temperature. Since the nitrogen concentration above 3% was easily achieved by our growth technique, the combination of TBA-DMHy as V precursors is a candidate for the growth of other III-V alloys containing nitrogen. We observed a decrease in PL intensity with enhancing nitrogen incorporation into solids. In order to recover from degradation of optical properties, rapid thermal annealing (RTA) was demonstrated and found to be effective. Therefore MOVPE using TBA-DMHy combined with postgrowth annealing is expected to obtain GaNAs alloys with high nitrogen concentration as well as excellent optical properties.

Metalorganic chemical vapor deposition of GaAsN epilayers: microstructures and optical properties

“…Three temperature regimes of N incorporation can be distinguished by three different activation energies, which are about 57 kcal/mol for high temperature regime (600-630 C), 29 kcal/mol for moderate temperature regime (550-600 C), and 11 kcal/mol for low temperature regime (500-550 C), respectively. The activation energy of moderate temperature regime is comparable to the previous reported values [10,11]. Clearly from Fig.…”

“…2 depicts the Arrhenius plot of N content as a function of growth temperature with different fractional DMHy flows. High growth temperature leads to a low N incorporation, as reported by different groups [9][10][11][12]. Three temperature regimes of N incorporation can be distinguished by three different activation energies, which are about 57 kcal/mol for high temperature regime (600-630 C), 29 kcal/mol for moderate temperature regime (550-600 C), and 11 kcal/mol for low temperature regime (500-550 C), respectively.…”

“…Since the successful growth of GaAsN alloy by metalorganic chemical vapor deposition (MOCVD) [1], dilute III-V nitride alloy semiconductors have attracted considerable attention in the recent decade [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16][17][18][19][20]. It has been shown that incorporation of a few percent of nitrogen (N) into (In)GaAs can significantly reduce the bandgap [1][2][3][4], making this system, especially the InGaAsN group of materials, a very promising candidate for long wavelength optoelectronic applications.…”

“…Although the post-growth annealing can improve the PL efficiency [3,4], it still remains a challenge to optimize the growth conditions of this material system in order to achieve optimum crystal qualities. Different groups have studied the GaAsN growth parameters using MOCVD [9][10][11][12]. However, due to the complexity of the MOCVD technology, differences of reactor pressure, carrier gas and metalorganic precursors, the resulting data are incompatible.…”

Critical RF damage conditions for the plasma-assisted molecular beam epitaxy growth of GaInNAs with dilute N2/Ar gas mix

“…Post-growth annealing has become a standard way to improve the optical emission intensity of narrow-bandgap dilute nitrides [16][17][18][19][20][21][22]. For GaInNAs QWs, it is also common to see a blue-shift in peak wavelength and a reduction in the FWHM of the PL emission [23,24].…”