Metalorganic molecular beam epitaxy of GaSb on patterned GaSb substrates using triethylgallium and Sb4

Marx, D.; Miyamoto, Kouji; Asahi, H.; Liu, X.F.; Villaflor, A.B.; Miki, K.; Gonda, S.; Shimomura, S.; Hiyamizu, S.

doi:10.1016/0022-0248(95)80064-j

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“…There have been a few reports on SAE of GaSb by metalorganic molecular beam epitaxy. [6][7][8][9] In this letter, we present the results of the LEO of GaSb by metalorganic chemical vapor deposition ͑MOCVD͒.…”

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confidence: 99%

Lateral epitaxial overgrowth of GaSb on GaSb and GaAs substrates by metalorganic chemical vapor deposition

Hansen

Inoki

et al. 2000

Applied Physics Letters

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Lateral epitaxial overgrowth of GaSb on GaSb and GaAs substrates patterned with SiO2 or Si3N4 films by metalorganic chemical vapor deposition was accomplished using trimethylgallium and trimethylantimony. Transmission electron microscopy measurements show that coalesced films grown on GaSb substrates exhibit defect-free materials, while those on GaAs substrates show regular, small-angle crystal tilting originating from large lattice mismatch.

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confidence: 99%