Metalorganic chemical vapor deposition of β-FeSi2 on β-FeSi2 seed crystals formed on Si substrates

Abstract

We have fabricated 200-nm-diameter ferromagnetic resonant tunneling diodes (FM-RTDs) using CaF 2 /Fe 3 Si heterostructures on Si (111)

A Stacked Sputtered Process for β-FeSi2 Formation

“…Moreover, β-FeSi 2 with large optical absorption coefficient (> 10 5 cm -1 at 1 eV) associated with a direct band gap of ~ 0.85 eV in the infrared region is considered as a promising light emitters, solar cells material. The problem of β-FeSi 2 is that a high-temperature annealing process is required for formation [1,2]. The other problem of β-FeSi 2 for devices application is excess carrier density [3].…”

A Stacked Sputtered Process for β-FeSi2 Formation

“…Many formation methods of FeSi 2 such as MBE, ion implantation, FeSi 2 target sputtering, and so on have been reported (2,3,4). However, lots of issues such as requirement of high-temperature annealing process (usually over 800 o C) and excess carrier concentration (more than 10 18 cm -3 ), and so on still exist (5,6). A stacked sputtered process has been confirmed to form silicide films at relatively low temperature (7).…”