A Stacked Sputtered Process for β-FeSi₂ Formation

Abstract

Iron disilicide films (FeSi2) has been formed using stacked sputtered process using Fe and Si stacked structures. Owing to high reaction of thin films, FeSi2 phase has been confirmed at an annealing temperature as low as 600℃ (commonly fomed at over 800℃). The atomic ratio could be also controlled by this process. In addition, the films which are formed by this method are confirmed to have four kinds of activation energy.