Metalorganic chemical vapor deposition of few-layer sp2 bonded boron nitride films

Paduano, Qing; Snure, Michael; Weyburne, David; Kiefer, Arnold; Siegel, Gene; Hu, Jianjun

doi:10.1016/j.jcrysgro.2016.06.012

Cited by 40 publications

(43 citation statements)

References 28 publications

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“…[28] Well ordered BN films are found to be the most ideal template for the combination of high-quality epitaxial growth, postgrowth device processing and mechanical lift-off. [28,32,33] High-resolution TEM images revealed the high-quality atomically abrupt interface between the GaN, AlN, and AlGaN layers. diameter) few-layer BN films with excellent thickness uniformity (<5%) and low roughness (<0.1 nm RMS) that are ideally suited to produce flexible AlGaN/GaN HEMTs.…”

Section: Flexible Gallium Nitridementioning

confidence: 99%

“…Further characterization of the BN film growth on sapphire necessary for the heterostructure growth is highlighted in previous works. [28,32,33] High-resolution TEM images revealed the high-quality atomically abrupt interface between the GaN, AlN, and AlGaN layers. This quality is further illustrated by low surface roughness (<0.3 nm RMS) revealed by atomic force microscopy (AFM) (Figure 2d).…”

Section: Flexible Gallium Nitridementioning

confidence: 99%

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Flexible Gallium Nitride for High‐Performance, Strainable Radio‐Frequency Devices

et al. 2017

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Flexible gallium nitride (GaN) thin films can enable future strainable and conformal devices for transmission of radio-frequency (RF) signals over large distances for more efficient wireless communication. For the first time, strainable high-frequency RF GaN devices are demonstrated, whose exceptional performance is enabled by epitaxial growth on 2D boron nitride for chemical-free transfer to a soft, flexible substrate. The AlGaN/GaN heterostructures transferred to flexible substrates are uniaxially strained up to 0.85% and reveal near state-of-the-art values for electrical performance, with electron mobility exceeding 2000 cm V s and sheet carrier density above 1.07 × 10 cm . The influence of strain on the RF performance of flexible GaN high-electron-mobility transistor (HEMT) devices is evaluated, demonstrating cutoff frequencies and maximum oscillation frequencies greater than 42 and 74 GHz, respectively, at up to 0.43% strain, representing a significant advancement toward conformal, highly integrated electronic materials for RF applications.

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Section: Flexible Gallium Nitridementioning

confidence: 99%

Section: Flexible Gallium Nitridementioning

confidence: 99%

Flexible Gallium Nitride for High‐Performance, Strainable Radio‐Frequency Devices

et al. 2017

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“…6(a) due to the self-terminating effect. 18,19 Despite similar thickness of the films, however, there is a significant change in optical absorption spectra, as shown in Fig. 6(b).…”

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confidence: 90%

“…[15][16][17] Recently, Q. S. Paduano et al, reported self-terminating effect in MOCVD growth of h-BN 18 and investigated effects of growth parameters including reactor pressure, and V/III ratio, defined as molar flow ratio between NH 3 and triethylborane (TEB) which are source of nitrogen and boron respectively, on thickness of MOCVD-grown h-BN. 19 X. Z.…”

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confidence: 99%

“…1(c). The both h-BN films consist of only a few atomic layers which is due to self-terminating effect occurring at low pressure and high V/III ratio growth conditions, 18,19 but the films have a different saturated thickness depending on the carrier gas. It is also experimentally observed that thickness of the sample is no longer increasing when the total pulse cycle number is increased further (not shown here).…”

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Role of hydrogen carrier gas on the growth of few layer hexagonal boron nitrides by metal-organic chemical vapor deposition

et al. 2017

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Few layer hexagonal boron nitride (h-BN) films were grown on 2-inch sapphire substrates by using metal-organic chemical vapor deposition (MOCVD) with two different carrier gases, hydrogen (H2) and nitrogen (N2). Structural, optical and electrical properties of the MOCVD-grown h-BN films were systematically investigated by various spectroscopic analyses and electrical conduction measurement. Based on the experimental findings including narrower X-ray photoelectron spectra, reduced intensity of the shoulder peaks in near edge X-ray absorption fine structure spectra, and decreased electrical conduction by more than three orders of magnitude when H2 carrier gas is employed, it was concluded that H2 has an advantage over N2 as the carrier gas for MOCVD growth of h-BN which is attributed to the healing of crystalline defects by etching and regrowth processes occurring under the pulsed source-injection mode.

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Developing a Synthesis Process for Large‐Scale h‐BN Nanosheets Using Magnetron Sputtering and Heat Annealing

Hirata,

Yoshii,

Yoshizato

et al. 2023

Adv Eng Mater

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Hexagonal boron nitride (h‐BN) is an extensively investigated 2D material with exceptional quantum effects, which renders it promising for use in next‐generation nanoelectronic devices. However, the synthesis of single‐ or few‐layer h‐BN nanosheets with large‐area single‐crystal structures is extremely challenging. In this article, a new method is presented for synthesizing h‐BN on a Cu substrate via magnetron sputtering and heat annealing. Three samples with different radio‐frequency (RF) power levels are prepared to evaluate the effect of RF power on h‐BN nanosheet synthesis. Under a higher RF power, the B‐to‐N bonding ratio is closer to 1:1 and further reduces the full width at half maximum of X‐Ray photoelectron spectroscopy B1s and N1s narrow spectra. Heating at 1000 °C reveals white domains with 60° facets, which may correspond to the hexagonal honeycomb lattice structure of h‐BN. Cross‐sectional observations show that a layered structure comprising 10–20 layers forms along the Cu interface. The elemental composition ratio and bonding states reveal the presence of equal amounts of N and B as well as a single peak derived from the B–N bond. Meanwhile, the E2g mode of h‐BN's six‐membered ring structure is indicated at 1364.6 cm−1, thus demonstrating the successful synthesis of an h‐BN film.

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Metalorganic chemical vapor deposition of few-layer sp2 bonded boron nitride films

Cited by 40 publications

References 28 publications

Flexible Gallium Nitride for High‐Performance, Strainable Radio‐Frequency Devices

Flexible Gallium Nitride for High‐Performance, Strainable Radio‐Frequency Devices

Role of hydrogen carrier gas on the growth of few layer hexagonal boron nitrides by metal-organic chemical vapor deposition

Developing a Synthesis Process for Large‐Scale h‐BN Nanosheets Using Magnetron Sputtering and Heat Annealing

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