Metalorganic chemical vapor deposition of atomically flat SrRuO3 films on stepped SrTiO3 substrates

Sumi, Akihiro; Takahashi, Kenji; Yokoyama, S.; Morioka, Hiroshi; Funakubo, Hiroshi; Yoshimoto, Mamoru

doi:10.1063/1.2006989

Cited by 18 publications

(6 citation statements)

References 16 publications

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“…Its lattice can be also considered as a pseudocubic perovskite structure with a 0 = 3.930 Å 1. SrRuO 3 thin films have been deposited by different depositions methods such as pulsed laser deposition (PLD) 2, 3, rf sputtering 4, 5, and metalorganic chemical vapor deposition (MOCVD) 6–8. SrRuO 3 exhibits low resistivity, good chemical and thermal stability, therefore is successfully used as electrode in devices based on ferroelectrics 9–11.…”

Section: Introductionmentioning

confidence: 99%

Effects of post‐growth annealing on physical properties of SrRuO₃ thin film grown by MOCVD

Anooz

Schwarzkopf

Dirsyte

et al. 2010

Physica Status Solidi (a)

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6392 3003We report on the annealing effects on strontium ruthenate thin films deposited on SrTiO 3 using liquid-delivery metalorganic chemical vapor deposition (MOCVD). The results of high resolution X-ray diffraction (HR-XRD), Raman spectroscopy, atomic force microscopy (AFM), and electrical resistivity, before and after a post-growth annealing process were analyzed and compared. XRD and Raman spectroscopy for the asdeposited film revealed that the film had c-axis orientation and contained RuO 2 as secondary phase. Single phase SrRuO 3 could be obtained by annealing the film at 700 8C. Annealing at higher temperatures up to 850 8C leads to ruthenium deficiency, which is revealed by an increase in the out-of-plane lattice parameter, while at even higher annealing temperatures a decrease in the outof-plane lattice parameter was detected might be due to diffusion of Ti from the substrate. The electrical resistivity increased with increasing annealing temperature up to 950 8C and showed typical metallic temperature dependence, while for the film annealed at 1000 8C a semiconductor-like behavior was observed.

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Section: Introductionmentioning

confidence: 99%

Effects of post‐growth annealing on physical properties of SrRuO₃ thin film grown by MOCVD

Anooz

Schwarzkopf

Dirsyte

et al. 2010

Physica Status Solidi (a)

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“…͑001͒ c -oriented epitaxial SrRuO 3 ͑SRO͒ films having an atomically flat surface grown on ͑001͒STO single crystals were used as substrates. 8 The constituent phase and the orientation were identified by conventional x-ray diffraction ͑XRD͒. The crystal structure was analyzed in detail by XRD using synchrotron radiation ͑SPring-8, BL13XU͒.…”

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confidence: 99%

Thickness dependence of dielectric properties in bismuth layer-structured dielectrics

Takahashi

Suzuki

Kojima

et al. 2006

Applied Physics Letters

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1-4 However, the significant drop in the dielectric constant with decreased film thickness, widely known as "size effect," has been reported to become serious. [1][2][3][4] The size effect in thin film dielectrics has made it difficult to design their performance characteristics. There has therefore been a strong motivation to discover size-effect-free highly insulating dielectric materials with a high dielectric constant. In this letter, we propose thin films with c-axis-oriented bismuth layer-structured dielectrics ͑BLDs͒ as candidates for size-effect-free materials.BLDs have a natural superlattice structure along the c axis consisting of two kinds of two-dimensional nanolayers, i.e., a bismuth oxide ͑Bi 2 O 2 ͒ 2+ sheet and a pseudoperovskite block generally described as ͑A m−1 B m O 3m+1 ͒ 2− , where m is the number of BO 6 octahedra in a pseudoperovskite block. Interestingly, BLDs with even m exhibit no ferroelectricity along the c axis. 5,6 In our previous study, we found that c-axis-oriented epitaxial SrBi 2 Ta 2 O 9 ͑SBT, m =2͒ films exhibited no degradation in dielectric constant down to 20 nm in thickness, corresponding to eight unit cells.7 However, their dielectric constant of 55 was obviously not enough to replace the conventional perovskite-structured oxides. We therefore expanded our concept to a higher m of 4, i.e., SrBi 4 Ti 4 O 15 ͑SBTi͒ and CaBi 4 Ti 4 O 15 ͑CBTi͒, to obtain higher dielectric constant and to deepen the understanding of the basic characteristics of c-axis-oriented BLD films. As a result, we found the design concept of their properties and revealed that thin films of c-axis-oriented BLDs are promising candidates for high-density capacitor application. c-axis-oriented epitaxial SBTi and CBTi films were grown at a substrate temperature of 700°C by metal organic chemical vapor deposition. ͑001͒ c -oriented epitaxial SrRuO 3 ͑SRO͒ films having an atomically flat surface grown on ͑001͒STO single crystals were used as substrates. 8 The constituent phase and the orientation were identified by conventional x-ray diffraction ͑XRD͒. The crystal structure was analyzed in detail by XRD using synchrotron radiation ͑SPring-8, BL13XU͒. 9 The dielectric and insulation properties of the films were measured after formation of the top electrodes of 100 m Pt on the film surface followed by postannealing in an electrical furnace at 400°C for 30 min under 1 atm flowing oxygen ambience.a͒ Electronic

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“…), and oxygen as source materials. 10) The domain structures of the films were characterized by high-resolution x-ray diffraction (XRD) using a PANalytical X'pert PRO MRD system. XRD reciprocal space mapping was measured in order to estimate V c in a film with a mixture orientation of (00l) (c-domain) and (h00) (adomain): V c ¼ Vð00lÞ=½Vðh00Þ þ Vð00lÞ.…”

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Fatigue Properties of Epitaxial Pb(Zr_0.35Ti_0.65)O₃ Films with Various Volume Fractions of 90° Domains Grown on (100)_cSrRuO₃/(100)SrTiO₃ Substrates

Kim¹,

Morioka²,

Funakubo³

2006

jjap

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In the final jammed state of the random sequential adsorption of dimen on a onedimensional lattice, the average gap neighbouring a particle that originally adsorbed at time I is e-'e-c-'. Thus, the average final gap adjacent to the hm particle to adsorb is e-', while that fur the last particle is infinitesimally small. This result shows I h t there remains a (statistically) measurable imprint of the sequence of anival frozen into the RSA system. Tajus C, Ylot P. Choi H S and Talbot J 1994 Phys. Rev. E 49 3239 Brosilow B J and Ziff R M 1991 Phy. Rev. A 43 631 Flory P KeUer 1 B 1962 1. C k m . Phys. 37 2584 a h e n E R and Reiss H 1963 J. Chem. P b s . 38 680 Wdom B 1966 J. C k m Phys. 44 3888 Barron T H K and Boueher E A 1969 T r m . Farndny Soc. 65 3301 Gonzalez J 1. Hemmer P C H@ye J S 1974 C k m Phys. 3 228

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Metalorganic chemical vapor deposition of atomically flat SrRuO3 films on stepped SrTiO3 substrates

Cited by 18 publications

References 16 publications

Effects of post‐growth annealing on physical properties of SrRuO₃ thin film grown by MOCVD

Effects of post‐growth annealing on physical properties of SrRuO₃ thin film grown by MOCVD

Thickness dependence of dielectric properties in bismuth layer-structured dielectrics

Fatigue Properties of Epitaxial Pb(Zr_0.35Ti_0.65)O₃ Films with Various Volume Fractions of 90° Domains Grown on (100)_cSrRuO₃/(100)SrTiO₃ Substrates

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Metalorganic chemical vapor deposition of atomically flat SrRuO3 films on stepped SrTiO3 substrates

Cited by 18 publications

References 16 publications

Effects of post‐growth annealing on physical properties of SrRuO3 thin film grown by MOCVD

Effects of post‐growth annealing on physical properties of SrRuO3 thin film grown by MOCVD

Thickness dependence of dielectric properties in bismuth layer-structured dielectrics

Fatigue Properties of Epitaxial Pb(Zr0.35Ti0.65)O3 Films with Various Volume Fractions of 90° Domains Grown on (100)cSrRuO3/(100)SrTiO3 Substrates

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Effects of post‐growth annealing on physical properties of SrRuO₃ thin film grown by MOCVD

Effects of post‐growth annealing on physical properties of SrRuO₃ thin film grown by MOCVD

Fatigue Properties of Epitaxial Pb(Zr_0.35Ti_0.65)O₃ Films with Various Volume Fractions of 90° Domains Grown on (100)_cSrRuO₃/(100)SrTiO₃ Substrates