Metallic properties of magnesium point contacts

Smit, R. H. M.; Mares, A. I.; Häfner, Michael; Pou, Pablo Jauralde; Cuevas, Juan Carlos; Ruitenbeek, J. M. van

doi:10.1088/1367-2630/11/7/073043

Cited by 10 publications

(25 citation statements)

References 36 publications

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“…For other metals, however, their conductance histograms are not necessarily the same at low and RTs. In particular, considerable differences can be found in the conductance histograms of non‐cubic metals such as Zn 7, 8, Co 9, 10, Ga 11, and Mg 12. Histograms of these metals commonly exhibit a couple of low‐conductance peaks at (1–2) G 0 at 4 K but not at RT.…”

Section: Introductionmentioning

confidence: 99%

Formation of atom‐sized contacts of Mg and Mg alloys at room temperature

Takahashi

Kurokawa

Sakai

2012

Physica Status Solidi (a)

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We have measured the conductance of atom‐sized contacts of dilute MgZnCa and MgZnCe alloys at room temperature (RT) and found two new peaks at (1.6–1.7)G0 and (2.6–2.9)G0 (where $G_{0} \equiv 2e^{2} /h$ is the quantum unit of conductance) in their conductance histograms. Because the solute level in these alloys is too low to affect the contact conductance, these peaks can be considered as low‐conductance peaks of pure Mg, which have not been observed in the histogram of pure Mg at RT [Smit et al., New J. Phys. 11, 073043 (2009)]. The MgZnCa and MgZnCe alloys differ from pure Mg primarily in their superior ductility. Thus, the observation of new peaks for these alloys suggests that the absence of low‐conductance peaks below 4G0 in the room‐temperature histogram of pure Mg is likely related to the plasticity of Mg.

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Section: Introductionmentioning

confidence: 99%

Formation of atom‐sized contacts of Mg and Mg alloys at room temperature

Takahashi

Kurokawa

Sakai

2012

Physica Status Solidi (a)

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“…As seen in the plot, small displacements of electrode atoms significantly change the transmission value from 1.1 to 2.5. Similar calculations made on sp-metals such as Mg [8] and Zn [16] SACs find no such sensitivity of the transmission to structural perturbations. We therefore consider that the observed variation of τ should be a characteristic of d -band SACs.…”

Section: Resultsmentioning

confidence: 54%

“…The electron energy is measured from the Fermi level and the line at E = 0 in the plot indicates the position of the Fermi level. Previous calculations on some HCP SACs such as those of Mg [8] and Zn [16] yield relatively flat transmission spectra near the Fermi level, and the result is considered due to the sp-character of the valence electrons of these metals. On the other hand, the spectrum depicted in Fig.…”

Section: Resultsmentioning

confidence: 98%

“…Among HCP metals, the SAC conductance has been experimentally obtained on Mg [8], Zn [9] and Co [3,4,10,11]. These experiments were conducted at 4 K or below, while most experiments made at 300 K somehow failed to produce SACs of Mg [8,12], Zn [13] and Co [5]. In our recent experiment [14], we carried out break-junction experiments on Cd and Ti and obtained the conductance histogram shown in Fig.…”

Section: Introductionmentioning

confidence: 99%

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On the Single-Atom Conductance of Ti

Parveen

Kurokawa

Sakai

2015

e-J. Surf. Sci. Nanotech.

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Using non-equilibrium Green's function method, we have theoretically investigated electron transmission through [0001]-, [1120]-, and [1100]-oriented single-atom contacts (SACs) of Ti and found that all these SACs show transmission 2.3-2.4 at the Fermi level. The transmission sensitively varies with small perturbations of contact geometry but maintains its likeliest value at ∼ 2. Our results are compared with the experimental conductance histogram of

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“…23,46 This capability makes a TJMD much superior as compared to other molecular device fabrication schemes. 12 The planar nanogap devices have attempted Au, 59 magnesium, 60 nickel, 19 Co and NiFe. 61 The key reason why conventional molecular electronics is limited to few main materials (gold, mercury, silicon and carbon) is due to their chemical activities with the target molecule.…”

Section: Ability To Arbitrarily Choose Metal Electrodesmentioning

confidence: 99%

Advantages of Prefabricated Tunnel Junction-Based Molecular Spintronics Devices

Tyagi

Friebe

Baker

2015

NANO

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Molecule-based devices may govern the advancement of the next generation's logic and memory devices. Molecules have the potential to be unmatched device elements as chemists can mass produce an endless variety of molecules with novel optical, magnetic and charge transport characteristics. However, the biggest challenge is to connect two metal leads to a target molecule (s) and develop a robust and versatile device fabrication technology that can be adopted for commercial scale mass production. This paper discusses distinct advantages of utilizing commercially successful tunnel junctions as a vehicle for developing molecular spintronics devices. We describe the use of a prefabricated tunnel junction with the exposed sides as a testbed for molecular device fabrication. On the exposed sides of a tunnel junction molecules are bridged across an insulator by chemically bonding with the two metal electrodes; sequential growth of metal-insulator-metal layers ensures that separation between two metal electrodes is controlled by the insulator thickness to the molecular device length scale. This paper highlights various attributes of tunnel junction-based molecular devices with ferromagnetic electrodes for making molecular spintronics devices. We strongly emphasize a need for close collaboration between chemists and magnetic tunnel junction (MTJ) researchers. Such partnerships will have a strong potential to develop tunnel junction-based molecular devices for futuristic areas such as memory devices, magnetic metamaterials, high sensitivity multi-chemical biosensors, etc.

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Metallic properties of magnesium point contacts

Cited by 10 publications

References 36 publications

Formation of atom‐sized contacts of Mg and Mg alloys at room temperature

Formation of atom‐sized contacts of Mg and Mg alloys at room temperature

On the Single-Atom Conductance of Ti

Advantages of Prefabricated Tunnel Junction-Based Molecular Spintronics Devices

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