Metallic indium segregation control of InN thin films grown on Si(1 0 0) by plasma-enhanced atomic layer deposition

On the dynamics in chemical vapor deposition of InN

“…From these results in the literature, and from our results presented above, we suggest that time is an important parameter which modulates reaction mechanism its dynamics and strongly influences the deposited InN quality. 37,38 An ALD process needs to be done at relative low temperature to ensure the stability of the chemisorbed monolayer, and therefore need sufficiently long purge time to eliminate unwanted chemical reactions of physiosorbed molecules. As our ALD work presented above was done in a temperature range higher than the typical InN ALD window of 150-300 °C , 21,22,[38][39][40][41] and considering the difference in film deposition at different temperatures observed in Figs.…”

Elucidating the role of nitrogen plasma composition in the low-temperature self-limiting growth of indium nitride thin films

“…35,38 The lower BE peak at 396.5 eV is assigned to nitrogen in the form of InN. 23,31,32,[35][36][37][38][39][40][41][43][44][45][46][47][48][49][50][51][52][53] For Ar/N 2 -plasma samples, the additional components are at 397.2 and 398.3 eV. The upper component is preserved aer sputtering into the bulk of the lm and can be assigned to an In-N-O bonding environment, which leaves the middle component unassigned.…”

“…33,34 To date, there have been multiple efforts towards low-temperature InN growth via PE-ALD. 17,[30][31][32][35][36][37][38][39][40][41] Initial epitaxial growth of InN at sub-300 C was achieved by plasma-enhanced atomic layer epitaxy (PE-ALE) where the lms exhibited substrate-dependent varying crystallographic orientations. 17,36 In a relatively recent study, PE-ALD of monocrystalline InN lms has also been reported at 250 C using N 2 -plasma on lower-lattice-mismatched ZnO/Al 2 O 3 substrates, where the lms were fully relaxed with no voids or interlayers at the interfaces.…”

“…[30][31][32]35,37 Although there have been a number of studies on the plasma-assisted ALD of InN employing N 2 /H 2 and/or N 2 -only plasma compositions, an in-depth investigation of the surface reactions taking place during individual PE-ALD cycles is still signicantly missing. [30][31][32][33][34][35][36][37][38][39][40][41] In this work, we particularly investigate the role of hydrogen radicals in the surface reactions of TMI with Ar/N 2 plasma in a custom-designed compact hollowcathode plasma-ALD reactor. Unlike all previous efforts on PE-ALD of InN utilizing N 2 -plasma, we have observed a major phase transformation from crystalline nitride phase (h-InN) to oxide phase (c-In 2 O 3 ) with the addition of H 2 to Ar/N 2 plasma gas.…”

Direct Epitaxial Nanometer-Thin InN of High Structural Quality on 4H-SiC by Atomic Layer Deposition

“…6,11 It should be mentioned that non-optimal ALD growth condition will lead to rougher surface and In-rich clusters as observed in the literature. 24 A smooth surface is further shown by the topographical atomic force micrograph of the InN surface (Fig. 3b).…”