The solid state reaction between thin Fe-films and β-SiC (100) in UHV has been studied using AES. Even at room temperature, the reaction between the thin Fe-film and SiC occurred and formed Fe-silicide and graphite with a minor product of Fe-carbide (Fe3C). The reaction proceeded with an increase of Fe-coverage to some extent. With annealing of 15 Å-Fe-film/SiC below 540°C, the Fe-silicide formation was accelerated, but because the amount of available Fe was small, the dissolved carbon atoms were forced to form not the Fe-carbide but the graphite phase. Above 640°C, the Fe-silicide started to decompose and the carbon atoms diffused to the surface and formed surface graphite layers. With annealing at 1080°C, the free-Si segregated at the surface and formed Si-Si bonds, as well as the Si-C bonds consuming the surface graphite phase.