Metal-semimetal Schottky diode relying on quantum confinement

Gity, Farzan; Ansari, Lida; König, Christian; Verni, Giuseppe Alessio; Holmes, Justin D.; Long, Brenda; Lanius, Martin; Schüffelgen, Peter; Mußler, Gregor; Grützmacher, Detlev; Greer, James C.

doi:10.1016/j.mee.2018.03.022

Cited by 20 publications

(28 citation statements)

References 23 publications

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“…Contact engineering could further improve the device performance by structuring PtSe 2 films, benefiting from thick "bulk" semimetallic regions as source and drain contacts, and thin semiconducting channel connecting source and drain regions. 37,38 Due to the linear behavior of the output characteristic of the FETs (Fig. 4c), the possibility of a Schottky barrier-limited field-effect mobility is discarded.…”

Section: Resultsmentioning

confidence: 99%

Quantum confinement-induced semimetal-to-semiconductor evolution in large-area ultra-thin PtSe2 films grown at 400 °C

et al. 2019

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In this work, we present a comprehensive theoretical and experimental study of quantum confinement in layered platinum diselenide (PtSe 2 ) films as a function of film thickness. Our electrical measurements, in combination with density functional theory calculations, show distinct layer-dependent semimetal-to-semiconductor evolution in PtSe 2 films, and highlight the importance of including van der Waals interactions, Green's function calibration, and screened Coulomb interactions in the determination of the thickness-dependent PtSe 2 energy gap. Large-area PtSe 2 films of varying thickness (2.5-6.5 nm) were formed at 400°C by thermally assisted conversion of ultra-thin platinum films on Si/SiO 2 substrates. The PtSe 2 films exhibit p-type semiconducting behavior with hole mobility values up to 13 cm 2 /V·s. Metal-oxide-semiconductor field-effect transistors have been fabricated using the grown PtSe 2 films and a gate field-controlled switching performance with an I ON /I OFF ratio of >230 has been measured at room temperature for a 2.5-3 nm PtSe 2 film, while the ratio drops to <2 for 5-6.5 nm-thick PtSe 2 films, consistent with a semiconductingto-semimetallic transition with increasing PtSe 2 film thickness. These experimental observations indicate that the low-temperature growth of semimetallic or semiconducting PtSe 2 could be integrated into the back-end-of-line of a silicon complementary metaloxide-semiconductor process.npj 2D Materials and Applications (2019) 3:33 ; https://doi.

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Section: Resultsmentioning

confidence: 99%

Quantum confinement-induced semimetal-to-semiconductor evolution in large-area ultra-thin PtSe2 films grown at 400 °C

et al. 2019

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“…The Bi material ux was generated by an effusion cell operated at a temperature of 550 C, which yields a growth rate of 17 nm h À1 . 8 A round bottom ask was preheated using a heating mantle up to 180 C and le at this temperature for 30 min. The Bi thin lms were then placed in the ask under N 2 , annealed for 1 h and le to cool to room temperature.…”

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confidence: 99%

Oxide removal and stabilization of bismuth thin films through chemically bound thiol layers

et al. 2018

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“…[19a,32] The shoulders at 162.0 eV and 156.7 eV may be attributed to the Bi 4f 5/2 and Bi 4f 7/2 binding energies of metallic Bi. [33] The metallic Bi does not notice in XRD results, which may be due to the homogenous distribution of small nano clusters of Bi over the surface of La 2 O 3 . These small clusters are undetectable in XRD.…”

Section: X-ray Photoelectron Spectroscopy (La 192 Bi 008 O 3 )mentioning

confidence: 95%

Effect of Bi³⁺ Ion Concentration on Physicochemical, Optical and Catalytic Properties of One‐Pot Combustion Synthesized Nanocrystalline Bi‐Doped La₂O₃

2020

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La 2-2x Bi 2x O 3 (x = 0-0.04) nanocrystalline powders are synthesized by one-pot single step solution combustion method. 4 atom% Bi doped La 2 O 3 reveals the presence of both Bi 3 + and metallic Bi. Temperature programmed reduction (TPR) of La 2 O 3 and La 2 À 2x Bi 2x O 3 (x = 0.005-0.04) indicates that the oxygen storage capacity changes with the dopant (Bi) concentration. La 2-2x Bi 2x O 3 (x = 0.04) has less hygroscopic behavior compared to La 2 O 3 and shown enhanced stability in an open atmosphere. The direct band gap of La 2 O 3 and La(OH) 3 decreases significantly after Bi doping. Further, PL studies of Bi doped compounds show a blue emission at 458 nm due to 3 P 1-1 S 0 transition of the Bi 3 + ion substituted in La 2 O 3. Emission intensity is maximum with 0.5 atom percent Bi doping, which decreases gradually with increasing Bi 3 + ion concentration. Bi doping also modifies the catalytic activity of La 2 O 3, resulting in higher CO oxidation activity than unsubstituted La 2 O 3 .

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Metal-semimetal Schottky diode relying on quantum confinement

Cited by 20 publications

References 23 publications

Quantum confinement-induced semimetal-to-semiconductor evolution in large-area ultra-thin PtSe2 films grown at 400 °C

Quantum confinement-induced semimetal-to-semiconductor evolution in large-area ultra-thin PtSe2 films grown at 400 °C

Oxide removal and stabilization of bismuth thin films through chemically bound thiol layers

Effect of Bi³⁺ Ion Concentration on Physicochemical, Optical and Catalytic Properties of One‐Pot Combustion Synthesized Nanocrystalline Bi‐Doped La₂O₃

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Metal-semimetal Schottky diode relying on quantum confinement

Cited by 20 publications

References 23 publications

Quantum confinement-induced semimetal-to-semiconductor evolution in large-area ultra-thin PtSe2 films grown at 400 °C

Quantum confinement-induced semimetal-to-semiconductor evolution in large-area ultra-thin PtSe2 films grown at 400 °C

Oxide removal and stabilization of bismuth thin films through chemically bound thiol layers

Effect of Bi3+ Ion Concentration on Physicochemical, Optical and Catalytic Properties of One‐Pot Combustion Synthesized Nanocrystalline Bi‐Doped La2O3

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Effect of Bi³⁺ Ion Concentration on Physicochemical, Optical and Catalytic Properties of One‐Pot Combustion Synthesized Nanocrystalline Bi‐Doped La₂O₃