2001
DOI: 10.1016/s0022-3697(00)00074-3
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Metal–semiconductor transitions under uniaxial stress for single- and double-walled carbon nanotubes

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Cited by 19 publications
(6 citation statements)
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“…Because the variation of energy levels with the strain is different for different sub-bands, at certain strain the energy levels of sub-bands cross over, thus the band gap as a function of the torsional strain exhibits periodic behavior for large strain [20]. This oscillation of the band gap leads to the periodic metal-semiconductor transitions [96,98,106,107], examples of which are illustrated in figure 13. It is worth mentioning that the band gap of a SWNT also undergoes periodic oscillation with a magnetic field applied along the tube axis, due to the change in effective chirality from the presence of Aharonov-Bohm phase [95,97].…”
Section: Effects Of Mechanical Strain On Band Gapmentioning
confidence: 99%
“…Because the variation of energy levels with the strain is different for different sub-bands, at certain strain the energy levels of sub-bands cross over, thus the band gap as a function of the torsional strain exhibits periodic behavior for large strain [20]. This oscillation of the band gap leads to the periodic metal-semiconductor transitions [96,98,106,107], examples of which are illustrated in figure 13. It is worth mentioning that the band gap of a SWNT also undergoes periodic oscillation with a magnetic field applied along the tube axis, due to the change in effective chirality from the presence of Aharonov-Bohm phase [95,97].…”
Section: Effects Of Mechanical Strain On Band Gapmentioning
confidence: 99%
“…There have been a few predictions on the electronic structure evolution of SWCNT subjected to radial deformations, [28,29,30,31,32,33,34,35]: they basically show that both metal-semiconductor and semiconductor-metal transitions are possible, depending on the tube chirality and on the degree of deformation. There have been some experimental confirmations of both a semiconductor to metal transition in SWCNT [36] and of a metalsemiconductor transition in DWCNT [37] upon radial collapse.…”
Section: Introductionmentioning
confidence: 99%
“…10,11 On the other hand, theoretical calculations show that the chirality has only a small effect on the collapse pressure P c , which is mainly determined, for single-walled tubes, by the tube diameter 5,8,9 (given as P c B 1/d 3 , where d is the diameter of the tube). Furthermore, the electronic structure of CNTs is strongly dependent not only on their chirality but also on the modification of their radial cross-section geometry, [12][13][14][15][16][17][18][19] which can be affected by external forces like van der Waals interactions with a surface 20,21 or hybridization with an interface. 22 In this article we deal with the collapse process of CNTs, which encapsulate a molecular ''foreign material''.…”
Section: Introductionmentioning
confidence: 99%