Metal–semiconductor–metal ultraviolet photodiodes based on reduced graphene oxide/GaN Schottky contacts

AlGaN Ultraviolet Metal–Semiconductor–Metal Photodetectors with Reduced Graphene Oxide Contacts

“…Recently, Zhu et al and Li et al demonstrated the potential of rGO electrodes in the Si photodiodes [16,17]. Pandit et al studied rGO Schottky contacts on a GaN layer, presenting the dependency of the Schottky barrier height on the GO reduction temperature [18]. Hence, the combination of AlGaN and GO-based materials for UV-enhanced optical sensors seems to be an interesting and attractive topic for exploration.…”

Dual-functional ultraviolet photodetector with graphene electrodes on AlGaN/GaN heterostructure

“…AlGaN 22,23 . In this regard, the combination of graphene electrodes and AlGaN/GaN heterostructures may yield an excellent UV photodetector, considering the high transparency of graphene in the UV spectral region and the high electrical conductivities of graphene and 2DEG, which would benefit efficient charge collection in the photodetector.…”

Deep-ultraviolet integrated photonic and optoelectronic devices: A prospect of the hybridization of group III–nitrides, III–oxides, and two-dimensional materials

“…This is the first reported UV sensor based on as-deposited single-crystal insulating GaN films. Since then, various types of Al x Ga 1−x N-based PDs, particularly for photon detection in the solar-blind region (i.e., 230 to 280 nm), such as Schottky-type PDs [479][480][481] , metal-semiconductor-metal (MSM) PDs [482][483][484][485][486] , HEMTs [487] , and p-i-n heterojunction PDs [488][489][490][491] , have been demonstrated. Among these, MSM-based PDs attract noteworthy attention, owing to their ease of fabrication, low stray capacitances, and high switching speed for monolithic integration on photonic circuits [480,492,493] .…”