Metal–semiconductor–metal GaN ultraviolet photodetectors on Si(111)

Zhao, Yanyan; Jiang, Rui; Chen, P.; Xi, Dongjuan; Luo, Zhengtang; Zhang, R.; Shen, Bo; Chen, Z. Z.; Zheng, Youdou

doi:10.1063/1.127004

Cited by 62 publications

(21 citation statements)

References 20 publications

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“…Fig. 4.3 presents some common defects, including point defects and line defects in a semiconductor crystal: (1) vacancy, (2) self-interstitial, (3) foreign interstitial, (4) foreign substitutional, (5) stacking fault, (6) dislocation, (7) vacancy type dislocation loop, (8) interstitial type dislocation loop, (9) precipitate. Defects (1)- (4) and (5)- (8) are called point defects and line defects, respectively.…”

Section: Defects In Ganmentioning

confidence: 99%

Electronic properties of intrinsic defects and impurities in GaN

Duc¹

2015

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Section: Defects In Ganmentioning

confidence: 99%

Electronic properties of intrinsic defects and impurities in GaN

Duc¹

2015

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“…light-emitting diode and photodetector [28][29][30][31], covering a long range of wavelength. GaN is also a good candidate for fabricating high-power, high-frequency and high-temperature electronics, such as heterojunction bipolar transistors (HBT), heterostructure field effect transistors (BJT), high electron mobility transistors (HEMT), heterostructure field effect transistors (HFET), metal oxide semiconductor field effect transistors (MOSFET), Schottky and p-i-n rectifiers [32].…”

Section: Gallium Nitridementioning

confidence: 99%

CVD solutions for new directions in SiC and GaN epitaxy

Li¹

2015

Linköping Studies in Science and Technology. Dissertations

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This thesis aims to develop a chemical vapor deposition (CVD) process for the new directions in both silicon carbon (SiC) and gallium nitride (GaN) epitaxial growth. The properties of the grown epitaxial layers are investigated in detail in order to have a deep understanding. SiC is a promising wide band gap semiconductor material which could be utilized for fabricating high-power and high-frequency devices. 3C-SiC is the only polytype with a cubic structure and has superior physical properties over other common SiC polytypes, such as high hole/electron mobility and low interface trap density with oxide. Due to lack of commercial native substrates, 3C-SiC is mainly grown on the cheap silicon (Si) substrates. However, there’s a large mismatch in both lattice constants and thermal expansion coefficients leading to a high density of defects in the epitaxial layers. In paper 1, the new CVD solution for growing high quality double-position-boundaries free 3C-SiC using on-axis 4H-SiC substrates is presented. Reproducible growth parameters, including temperature, C/Si ratio, ramp-up condition, Si/H2 ratio, N2 addition and pressure, are covered in this study. GaN is another attractive wide band gap semiconductor for power devices and optoelectronic applications. In the GaN-based transistors, carbon is often exploited to dope the buffer layer to be semi-insulating in order to isolate the device active region from the substrate. The conventional way is to use the carbon atoms on the gallium precursor and control the incorporation by tuning the process parameters, e.g. temperature, pressure. However, there’s a risk of obtaining bad morphology and thickness uniformity if the CVD process is not operated in an optimal condition. In addition, carbon source from the graphite insulation and improper coated graphite susceptor may also contribute to the doping in a CVD reactor, which is very difficult to be controlled in a reproducible way. Therefore, in paper 2, intentional carbon doping of (0001) GaN using six hydrocarbon precursors, i.e. methane (CH4), ethylene (C2H4), acetylene (C2H2), propane (C3H8), iso-butane (i-C4H10) and trimethylamine (N(CH3)3), have been explored. In paper 3, propane is chosen for carbon doping when growing the high electron mobility transistor (HEMT) structure on a quarter of 3-inch 4H-SiC wafer. The quality of epitaxial layer and fabricated devices is evaluated. In paper 4, the behaviour of carbon doping using carbon atoms from the gallium precursor, trimethylgallium (Ga(CH3)3), is explained by thermochemical and quantum chemical modelling and compared with the experimental results. GaN is commonly grown on foreign substrates, such as sapphire (Al2O3), Si and SiC, resulting in high stress and high threading dislocation densities. Hence, bulk GaN substrates are preferred for epitaxy. In paper 5, the morphological, structural and luminescence properties of GaN epitaxial layers grown on N-face free-standing GaN substrates are studied since the N-face GaN has advantageous characteristics compared to the Ga...

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“…High pressure solution (HPS) [27] [26] Ammonothermal growth Na-flux [28], [29], [ Since there is a lack of native substrates of GaN, foreign substrates such as sapphire or SiC are used. Due to the difference in lattice parameters of the substrate and GaN, the dislocation density in the material is high (in the order of >10 9 cm -2 for a 1µm thick layer). However, the dislocation density is dropping with thickness, and for a layer of 1 mm, the dislocation density is ~10 6 cm -2 which is necessary for fabrication of GaN based lasers.…”

Section: Introductionmentioning

confidence: 99%

Investigation of deep levels in bulk GaN

Duc¹

2014

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The first gallium nitride (GaN) crystal was grown by hydride vapor phase epitaxy in 1969 by Maruska and Tietjen and since then, there has been an intensive development of the field, especially after the ground breaking discoveries concerning growth and p-type doping of GaN done by the 2014 year Nobel Laureates in Physics, Isamu Akasaki, Hiroshi Amano and Shuji Nakamura. GaN and its alloys with In and Al belong to a semiconductor group which is referred as the III-nitrides. It has outstanding properties such as a direct wide bandgap (3.4 eV for GaN), high breakdown voltage and high electron mobility. With these properties, GaN is a promising material for a variety of applications in electronics and optoelectronics. The perhaps most important application is GaN-based light-emitting-diodes (LED) which can produce a highbrightness blue light. Since the bandgap of GaN can be controlled by alloying it with aluminium (Al) or indium (In) for a larger or smaller bandgap, respectively, GaN is very important for optoelectronic applications from infrared to the deep ultraviolet region. There are other semiconductors with bandgap similar to GaN such as SiC, and the first commercially blue light emitting LEDs where manufactured in SiC, however, SiC has an indirect bandgap with a low efficiency of emitting photons, and today, the SiC based LEDs have been completely replaced by the considerable more efficient GaN based LEDs. One problem, which has hampered the development of GaN based devices, is the lack of native substrate of GaN. Due to that, most of the GaN based devices are fabricated on foreign substrates such as SiC or Al2O3. Growing on a foreign substrate results in high threading dislocation (TD) densities (~109 cm-2) and stress in the GaN layer due to lattice mismatch and difference of thermal expansion coefficient between GaN and the substrate. The high TD density and the stress influence the performance of the devices. Another important aspect related to GaN which has attracted manystudies is how defects affect the efficiency of GaN-based devices.Therefore, it is necessary to understand the properties and to identifythem. When we know there properties, one can estimate how they willinfluence the behavior of devices, and thereby, optimize the performance of the device for its application. Basically, a fundamental knowledge of defect properties, and how to introduce them in a controlled manner, or to avoid them, is important in order to optimize the performance of devices. Defects can be introduced both intentionally and unintentionally into semiconductors during the growth process, during processing of the device or from the working environment, for example, devices working in a radioactive ambient are more likely to have defects induced by irradiation. This thesis is focused on electrical characterization of defects in bulk GaN grown by halide vapor phase epitaxy (HVPE) by using deep level transient spectroscopy. Other measurement techniques like currentvoltage measurement (IV), capacitance-voltage measurement (CV) a...

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Metal–semiconductor–metal GaN ultraviolet photodetectors on Si(111)

Cited by 62 publications

References 20 publications

Electronic properties of intrinsic defects and impurities in GaN

Electronic properties of intrinsic defects and impurities in GaN

CVD solutions for new directions in SiC and GaN epitaxy

Investigation of deep levels in bulk GaN

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