Electronic properties of intrinsic defects and impurities in GaN

Duc, Tran Thien

doi:10.3384/diss.diva-121710

Cited by 2 publications

(2 citation statements)

References 109 publications

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“…Defects could be introduced either intentionally or unintentionally into semiconductors during the growth process, during processing of the device or from the working environment [21]. Theoretical studies which are confirmed by results of measurement show that most of the existing defects in chalcopyrite solar cells, are multivalent in nature [22,23].…”

Section: Effect Of Multivalent Defect Concentration In Cigs (Absorber) Layermentioning

confidence: 99%

Numerical Simulation of Copper Indium Gallium Diselenide Solar Cells Using One Dimensional SCAPS Software

Lawani

Ibeha

Ige

et al. 2021

J. Nig. Soc. Phys. Sci.

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The effect of multivalent defect density, thickness of absorber and buffer layer thickness on the performance of CIGS solar cells were investigated systematically. The study was carried out using Solar Cells Capacitance Simulator (SCAPS) code, which is capable of solving the basic semiconductor equations. Employing numerical modelling, a solar cell with the structure Al|ZnO : Al|In2S3|CIGS|Pt was simulated and in it, a double acceptor defect (-2/-1/0) with a density of 1014 cm-3 was set in the absorber in the first instance. This initial device gave a power conversion efficiency (PCE) of 25.85 %, short circuit current density (Jsc) of 37.9576 mAcm-2, Photovoltage (Voc) of 0.7992 V and fill factor (FF) of 85.22 %. When the density of multivalent defect (-2/-1/0) was varied between 1010 cm-3 and 1017 cm-3 the solar cells performance dropped from 26.81 % to 16.87 %. The champion device was with multivalent defect of 1010 cm-3 which shows an enhancement of 3.71 % from the pristine device. On varying the CIGS layer thickness from 0.4 um to 3.6 um, an increase in PCE was observed from 0.4 um to 1.2 um then the PCE began to decrease beyond a thickness of 1.2 um. The best PCE was recorded with thickness of 1.2 um which gave Jsc of 37.7506 mAcm-2, Voc of 0.8059 V, FF of 85.2655 %. On varying the In2S3 (buffer) layer thickness from 0.01 um to 0.08 um, we observed that there was no significant change in photovoltaic parameters of the solar cells as buffer layer thickness increased.

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Section: Effect Of Multivalent Defect Concentration In Cigs (Absorber) Layermentioning

confidence: 99%

Numerical Simulation of Copper Indium Gallium Diselenide Solar Cells Using One Dimensional SCAPS Software

Lawani

Ibeha

Ige

et al. 2021

J. Nig. Soc. Phys. Sci.

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“…Katkısız GaN filmlerin içerisinde oksijen gibi safsızlıklar bulunduğunda n-tipi yarıiletken özelliği göstermektedir (Duc, 2015). Bu yüzden elektrodepozisyon yöntemi ile üretilen GaN filmlerle pn heteroeklem, metal-yarıiletken (MY) ya da metal-yalıtkan-yarıiletken (MYY) diyot yapısı oluşturabilmek için alttaş (katot) olarak p-Si kullanmak gerekmektedir.…”

Section: Introductionunclassified

Electrical Characterization of the GaxOyNz/p-Si Diode Structure Manufactured by Electrodeposition Method Under Illumination

Birgi

2022

Iğdır Üniversitesi Fen Bilimleri Enstitüsü Dergisi

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Bu çalışmada, GaxOyNz yarıiletken materyal LED grubu aydınlatması altında elektrodepozisyon tekniği kullanılarak p-Si (100) üzerine biriktirilmiştir. Galyum Nitrat, Amonyum Nitrat ve deiyonize su karışımı kullanılarak elektrolit çözeltisi hazırlanmıştır. Platin levha ve p-Si sırasıyla anot ve katot olarak kullanılmıştır. GaxOyNz/p-Si aygıt yapısının üretim aşamasından sonra, 20-100 oC aralığında 10 oC adımlarla sıcaklığa bağımlı Akım-Gerilim (I-V) ölçümleri alınarak iki boyutlu arayüzey durum yoğunluğu dağılımı analizi yapılmıştır. Yapılan analizler sonucunda GaxOyNz/p-Si aygıt yapısının doğrultucu diyot özelliği sergilediği görülmüştür.

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Electronic properties of intrinsic defects and impurities in GaN

Cited by 2 publications

References 109 publications

Numerical Simulation of Copper Indium Gallium Diselenide Solar Cells Using One Dimensional SCAPS Software

Numerical Simulation of Copper Indium Gallium Diselenide Solar Cells Using One Dimensional SCAPS Software

Electrical Characterization of the GaxOyNz/p-Si Diode Structure Manufactured by Electrodeposition Method Under Illumination

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