Metal–Semiconductor Junction Behavior

Milnes, A. G.; Feucht, D. L.

doi:10.1016/b978-0-12-498050-1.50013-1

Cited by 42 publications

(50 citation statements)

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“…Interface states are known to influence the built‐in potential ( V bi ) of a diode and hence its photovoltaic properties 37 . Figure a illustrates the approximate energy levels of a Cu 2 O–ZnO heterojunction.…”

Section: Cu2o–zno Heterojunctions Synthesized Using Buffered Cu2o Dep...mentioning

confidence: 99%

A Novel Buffering Technique for Aqueous Processing of Zinc Oxide Nanostructures and Interfaces, and Corresponding Improvement of Electrodeposited ZnO‐Cu₂O Photovoltaics

Musselman

Marin

Wisnet

et al. 2010

Adv Funct Materials

125

117

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A novel buffering method is presented to improve the stability of zinc oxide processed in aqueous solutions. By buffering the aqueous solution with a suitable quantity of sacrificial zinc species, the dissolution of functional zinc oxide structures and the formation of unwanted impurities can be prevented. The method is demonstrated for ZnO films and nanowires processed in aqueous solutions used for the selective etching of mesoporous anodic alumina templates and the electrochemical deposition of Cu2O. In both cases, improved ZnO stability is observed with the buffering method. ZnO‐Cu2O heterojunction solar cells (bilayer and nanowire cells) synthesized using both traditional and buffered deposition methods are characterized by impedance spectroscopy and solar simulation measurements. Buffering the Cu2O deposition solution is found to reduce unwanted recombination at the heterojunction and improve the photovoltaic performance.

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Section: Cu2o–zno Heterojunctions Synthesized Using Buffered Cu2o Dep...mentioning

confidence: 99%

A Novel Buffering Technique for Aqueous Processing of Zinc Oxide Nanostructures and Interfaces, and Corresponding Improvement of Electrodeposited ZnO‐Cu₂O Photovoltaics

Musselman

Marin

Wisnet

et al. 2010

Adv Funct Materials

125

117

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“…To address the recombination issue of metal ion-doped hematite, introducing p-type dopants into n-doped hematite has been suggested to generate additional states above the valence band of hematite and to form a p–n junction at the surface. The p–n junction effectively reduces the charge recombination by providing a supplemental charge separation driving force due to the increased built-in potential. , Similarly, the n–n + homojunction, which occurs at the interfaces between slightly doped semiconductors and heavily doped semiconductors, has been used to reduce the contact resistance between the semiconductor and the metal by inducing a slight bending of energy bands. , In this system, lightly doped metal oxides provide a longer space charge region (SCR) with greater numbers of reactive electron–hole pairs (EHPs) for water splitting compared to highly doped metal oxides …”

Section: Introductionmentioning

confidence: 99%

“…9,22 Similarly, the n−n + homojunction, which occurs at the interfaces between slightly doped semiconductors and heavily doped semiconductors, has been used to reduce the contact resistance between the semiconductor and the metal by inducing a slight bending of energy bands. 32,33 In this system, lightly doped metal oxides provide a longer space charge region (SCR) with greater numbers of reactive electron−hole pairs (EHPs) for water splitting compared to highly doped metal oxides. 34 In addition, unlike many metal ion dopants with unavoidable recombination issues due to newly generated energy states, the recombination of nonmetal-doped hematite is lower.…”

Section: ■ Introductionmentioning

confidence: 99%

Boron Doping of Metal-Doped Hematite for Reduced Surface Recombination in Water Splitting

et al. 2018

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We report that metal ions (M: Sn4+ and Ti4+) and boron-codoped hematite photoanodes with an n–n+ homojunction showed significantly increased photoelectrochemical (PEC) water splitting activity with greatly reduced surface recombination. The secondary B-doping of broadly used M-doped hematite photoanodes not only suppresses the number of M+ ions, which inevitably cause electron–hole pair (EHP) recombination, but also generates an internal electric field for easy hole extraction. Taking advantage of these effects, the maximum length (500–600 nm) of hematite, which has the reported highest PEC performance, was increased to up to 900 nm in M:B-Fe2O, which in turn increased the active area of the photoanode. The M:B-Fe2O3 with a film thickness of 900 nm and a diameter of 122 nm converted the incident photons to EHPs with substantially reduced recombination and exhibited a photocurrent density of 1.92 mA/cm2 at 1.23 VRHE. After loading inexpensive oxygen evolution reaction catalysts (FeOOH) on the surface of M:B-Fe2O3, the photocurrent density of FeOOH/M:B-Fe2O3 reached 2.35 mA/cm2 at 1.23 VRHE. The cost-effective strategy of B-doping into M-doped hematite provides a straightforward way to address the M-doping-related negative effects, such as a high electron–hole recombination rate on the surface of hematite, and thus the critical length limitation of an ideal hematite photoanode, to potentially improve the performance of PEC devices.

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“… 39 Therefore, the electron in the Ag layer can be easily injected into the ITO layer due to downward band bending at the contact by the difference in work functions between Ag ( φ M = 4.4 eV) layer and ITO ( φ O = 4.5–5.1 eV) in the flexible ITO/Ag/ITO triple-layer structures. 40,41 A schematic of the energy band diagram of the ITO and Ag prior to and after their contact is shown in Fig. 4(a) and (b) , respectively.…”

Section: Resultsmentioning

confidence: 99%

Highly flexible touch screen panel fabricated with silver-inserted transparent ITO triple-layer structures

2018

RSC Adv.

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Metal–Semiconductor Junction Behavior

Cited by 42 publications

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A Novel Buffering Technique for Aqueous Processing of Zinc Oxide Nanostructures and Interfaces, and Corresponding Improvement of Electrodeposited ZnO‐Cu₂O Photovoltaics

A Novel Buffering Technique for Aqueous Processing of Zinc Oxide Nanostructures and Interfaces, and Corresponding Improvement of Electrodeposited ZnO‐Cu₂O Photovoltaics

Boron Doping of Metal-Doped Hematite for Reduced Surface Recombination in Water Splitting

Highly flexible touch screen panel fabricated with silver-inserted transparent ITO triple-layer structures

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Metal–Semiconductor Junction Behavior

Cited by 42 publications

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A Novel Buffering Technique for Aqueous Processing of Zinc Oxide Nanostructures and Interfaces, and Corresponding Improvement of Electrodeposited ZnO‐Cu2O Photovoltaics

A Novel Buffering Technique for Aqueous Processing of Zinc Oxide Nanostructures and Interfaces, and Corresponding Improvement of Electrodeposited ZnO‐Cu2O Photovoltaics

Boron Doping of Metal-Doped Hematite for Reduced Surface Recombination in Water Splitting

Highly flexible touch screen panel fabricated with silver-inserted transparent ITO triple-layer structures

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A Novel Buffering Technique for Aqueous Processing of Zinc Oxide Nanostructures and Interfaces, and Corresponding Improvement of Electrodeposited ZnO‐Cu₂O Photovoltaics

A Novel Buffering Technique for Aqueous Processing of Zinc Oxide Nanostructures and Interfaces, and Corresponding Improvement of Electrodeposited ZnO‐Cu₂O Photovoltaics