Metal-semiconductor contacts for GaAs bulk effect devices

Braslau, N.; Gunn, J. B.; Staples, J. L.

doi:10.1016/0038-1101(67)90037-8

Cited by 226 publications

(32 citation statements)

References 8 publications

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“…27,28 On the other hand, the structural behaviour of interfaces between Au thin films and GaAs substrates has been investigated because this system has been consequently used as ohmic contacts. 29,30 However, detailed role of Au nanoparticles on the GaAs surfaces during the annealing is not clear, although the evolution of Au containing droplets in Au coated GaAs substrates depends strongly upon the environmental conditions. As a consequence, it is critical to determine the Au behaviour from view-points of fundamental understanding and technological applications.…”

Section: Au Impact On Gaas Epitaxial Growth On Gaas (111) B Substratementioning

confidence: 99%

Au impact on GaAs epitaxial growth on GaAs (111)B substrates in molecular beam epitaxy

Liao

Chen

et al. 2013

Applied Physics Letters

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Section: Au Impact On Gaas Epitaxial Growth On Gaas (111) B Substratementioning

confidence: 99%

Au impact on GaAs epitaxial growth on GaAs (111)B substrates in molecular beam epitaxy

Liao

Chen

et al. 2013

Applied Physics Letters

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“…In this letter, we report on transport measurements of modulation-doped GaAs/ AlGaAs core/shell nanowires. In order to gain Ohmic contacts, we used an Ni/AuGe/Ni/Au layer system, 13,14 which is common for contacting 2-dimensional electron gases based on GaAs/AlGaAs layer systems. 15,16 During the contact annealing, Ge diffuses into the semiconductor and occupies Ga vacancies leading to an effective n-type doping.…”

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confidence: 99%

Preparation of Ohmic contacts to GaAs/AlGaAs-core/shell-nanowires

Wirths

Mikulics

Heintzmann

et al. 2012

Applied Physics Letters

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Ohmic contacts to GaAs/AlGaAs core/shell nanowires are prepared by using a Ni/AuGe/Ni/Au layer system. In contrast to Ohmic contacts to planar GaAs/AlGaAs layer systems here, relatively low alloying temperatures are used in cylindrical geometry. Lowest resistances are found for annealing temperatures of 320 °C and 340 °C. For annealing temperatures exceeding 360 °C, the nanowires degraded completely. Nanowires annealed under optimized conditions preserved their Ohmic characteristics even down to temperatures of 4 K.

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“…The AuGe/Ni/Au contact was first introduced by Braslau et al [4] to contact n-GaAs, and several studies aimed at understanding the contact mechanism for this type of contact [5][6][7][8][9][10][11][12][13][14][15][16][17][18]. Later studies focused on the formation of an ohmic contact to a 2DEG in a GaAs/Al x Ga 1−x As heterostructure [19][20][21][22][23][24][25][26][27], but do not report how the optimal annealing parameters depend on the depth of the 2DEG below the surface.…”

Section: Introductionmentioning

confidence: 99%

On the annealing mechanism of AuGe/Ni/Au ohmic contacts to a two-dimensional electron gas in GaAs/Al_xGa_1−xAs heterostructures

Koop¹,

Iqbal²,

Limbach³

et al. 2013

Semicond. Sci. Technol.

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On the annealing mechanism of AuGe/Ni/Au ohmic contacts to a two-dimensional electron gas in GaAs/AlxGa1-xAs heterostructures Koop On the annealing mechanism of AuGe/Ni/Au ohmic contacts to a two-dimensional electron gas in GaAs/AlxGa1-xAs heterostructures. Semiconductor Science and Technology, 28(2), 025006-1-025006-9.[025006]. DOI: 10.1088/0268-1242/28/2/025006 Copyright Other than for strictly personal use, it is not permitted to download or to forward/distribute the text or part of it without the consent of the author(s) and/or copyright holder(s), unless the work is under an open content license (like Creative Commons).Take-down policy If you believe that this document breaches copyright please contact us providing details, and we will remove access to the work immediately and investigate your claim. Abstract Ohmic contacts to a two-dimensional electron gas (2DEG) in GaAs/Al x Ga 1−x As heterostructures are often realized by annealing of AuGe/Ni/Au that is deposited on its surface. We studied how the quality of this type of ohmic contact depends on the annealing time and temperature, and how optimal parameters depend on the depth of the 2DEG below the surface. Combined with transmission electron microscopy and energy-dispersive x-ray spectrometry studies of the annealed contacts, our results allow for identifying the annealing mechanism. We use this for proposing a model that can predict the optimal annealing time when our commonly applied recipe is used for a certain heterostructure at a certain temperature.

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Metal-semiconductor contacts for GaAs bulk effect devices

Cited by 226 publications

References 8 publications

Au impact on GaAs epitaxial growth on GaAs (111)B substrates in molecular beam epitaxy

Au impact on GaAs epitaxial growth on GaAs (111)B substrates in molecular beam epitaxy

Preparation of Ohmic contacts to GaAs/AlGaAs-core/shell-nanowires

On the annealing mechanism of AuGe/Ni/Au ohmic contacts to a two-dimensional electron gas in GaAs/Al_xGa_1−xAs heterostructures

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Metal-semiconductor contacts for GaAs bulk effect devices

Cited by 226 publications

References 8 publications

Au impact on GaAs epitaxial growth on GaAs (111)B substrates in molecular beam epitaxy

Au impact on GaAs epitaxial growth on GaAs (111)B substrates in molecular beam epitaxy

Preparation of Ohmic contacts to GaAs/AlGaAs-core/shell-nanowires

On the annealing mechanism of AuGe/Ni/Au ohmic contacts to a two-dimensional electron gas in GaAs/AlxGa1−xAs heterostructures

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On the annealing mechanism of AuGe/Ni/Au ohmic contacts to a two-dimensional electron gas in GaAs/Al_xGa_1−xAs heterostructures