Metal oxide/silicon oxide multilayer with smooth interfaces produced by in situ controlled plasma-enhanced MOCVD

Hamelmann, Frank; Haindl, G.; Schmalhorst, Jan-Michael; Aschentrup, A; Majková, E.; Kleineberg, Ulf; Heinzmann, Ulrich; Klipp, Andreas; Jutzi, Peter; Anopchenko, Aleksei; Jergel, M.; Luby, Š.

doi:10.1016/s0040-6090(99)00695-1

Cited by 21 publications

(8 citation statements)

References 14 publications

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“…1. Transmission electron micrograph of a thin section through a defect buried by a metal-silicon stack produced by MOCVD [13]. This scheme illustrates the principle of contrast generation arising from the differences in photoelectron generation depending on the standing wavefield's phase condition.…”

Section: Detection Of Programmed Buried Defectsmentioning

confidence: 87%

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A new approach for actinic defect inspection of EUVL multilayer mask blanks: Standing wave photoemission electron microscopy

Neuhäusler¹,

Lin²,

Oelsner³

et al. 2006

Microelectronic Engineering

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Section: Detection Of Programmed Buried Defectsmentioning

confidence: 87%

“…We thank our colleagues F. Hamelmann and G. Haindl for providing the TEM image shown in Fig. 1 [13]. We are indebted to BESSY II, Berlin, Germany for support by staff and for providing excellent working conditions.…”

Section: Acknowledgmentsmentioning

confidence: 95%

A new approach for actinic defect inspection of EUVL multilayer mask blanks: Standing wave photoemission electron microscopy

Neuhäusler¹,

Lin²,

Oelsner³

et al. 2006

Microelectronic Engineering

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“…Detailed study has demonstrated that the size of as-prepared ZnO QDs was influenced by the deposition time, ambient temperature and laser power. [101][102][103]. As nano-sized ZnO has attracted a lot of attention in the past decade, MOCVD also began to be used in fabricating ZnO nanostructures, such as nanowires, nanorods [104,105].…”

Section: Pulsed Laser Ablation (Pla or Pld)mentioning

confidence: 99%

Synthesis, Self-assembly and Optoelectronic Properties of Monodisperse ZnO Quantum Dots

Mei¹,

Hu²

2011

Optoelectronic Devices and Properties

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“…42 The possibility of using π-Si microcavities as chemical sensors has been investigated. 45,46,47 SiO 2 /TiO 2 microcavities, 48 SiO x /WO y , and SiO x /MO y multilayers 49 have been fabricated. 45,46,47 SiO 2 /TiO 2 microcavities, 48 SiO x /WO y , and SiO x /MO y multilayers 49 have been fabricated.…”

Section: Similarity To Porous Siliconmentioning

confidence: 99%

<title>Silicon microcavity based on 1D photonic bandgap structure</title>

Serpengüzel

2002

SPIE Proceedings

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In this paper, we report on the design, modeling, fabrication, and characterization of an amorphous silicon microcavity. The microcavity is fabricated using a one-dimensional photonic bandgap structure. The structure was grown by plasma deposition method. Quarter wavelength thick stacks of hydrogenated amorphous silicon nitride and hydrogenated amorphous silicon oxide were consecutively deposited using low temperature plasma enhanced chemical vapor deposition. For the characterization of the dielectric microcavities the intrinsic photoluminescence of the amorphous silicon is used. Bulk amorphous silicon has a luminescence bandwidth of 250 nm. Due to the presence of the microcavity, the luminescence is enhanced by at least an order of magnitude at the resonance wavelength of 700 nm. Additionally, the luminescence is inhibited in the photonic bandgap occupying a spectral band of 150 nm. The microcavity resonance has a quality factor of 120 corresponding to a luminescence linewidth of 6 nm. The enhancement of the photoluminescence is understood by the modified photon density of states of the dielectric microcavity.

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Metal oxide/silicon oxide multilayer with smooth interfaces produced by in situ controlled plasma-enhanced MOCVD

Cited by 21 publications

References 14 publications

A new approach for actinic defect inspection of EUVL multilayer mask blanks: Standing wave photoemission electron microscopy

A new approach for actinic defect inspection of EUVL multilayer mask blanks: Standing wave photoemission electron microscopy

Synthesis, Self-assembly and Optoelectronic Properties of Monodisperse ZnO Quantum Dots

<title>Silicon microcavity based on 1D photonic bandgap structure</title>

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