2021
DOI: 10.1021/acs.jpclett.1c02371
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Metal Oxide-Induced Instability and Its Mitigation in Halide Perovskite Solar Cells

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Cited by 29 publications
(24 citation statements)
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References 98 publications
(250 reference statements)
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“…Reactions between metal oxides and perovskite have been previously reported, where the metal oxides (e.g., TiO 2 , NiO x , and SnO 2 ) can react with perovskite and cause decomposition of the organic cation at the interface. [33,89] SnO 2 can also react with perovskite because of its catalytic properties from the exposed facet and active defects on the surface under exterior stresses. Although SnO 2 is less photocatalytic than TiO 2 , it is not perfectly harmless to perovskite under UV illumination.…”
Section: Chemical Reactionmentioning
confidence: 99%
“…Reactions between metal oxides and perovskite have been previously reported, where the metal oxides (e.g., TiO 2 , NiO x , and SnO 2 ) can react with perovskite and cause decomposition of the organic cation at the interface. [33,89] SnO 2 can also react with perovskite because of its catalytic properties from the exposed facet and active defects on the surface under exterior stresses. Although SnO 2 is less photocatalytic than TiO 2 , it is not perfectly harmless to perovskite under UV illumination.…”
Section: Chemical Reactionmentioning
confidence: 99%
“…Because the SAM approach enables CTL-free fabrication of PSCs, improving the stability of SAMs on TCOs such as ITO or FTO should be a priority. Although these TCOs are not as reactive as other metal oxides, such as TiO 2 and ZnO, they can still react with perovskites over time, as any metal-oxide surface can oxidize a perovskite interface with dangling metal and oxygen atoms 157,186 . To preserve the long-term chemical and physical integrity of metal-oxide/perovskite interfaces, first, pinhole-free deposition of SAM is required to prevent any physical contact between the metal-oxide and perovskite layers.…”
Section: Discussionmentioning
confidence: 99%
“…In light of these chemical degradation pathways, it is beneficial to incorporate a thin and inert buffer layer at the metal-oxide/perovskite interface to prevent the interfacial reactions and the degradation of the absorber layer. Various barrier and/or passivation layers have been inserted at the metal-oxide/perovskite interface to address its chemical instability 157 . Most are insulating in nature, which can prevent efficient extraction of charges if their thickness is not controlled at the nanometre scale.…”
Section: Chemical Reactions At Metal-oxide/perovskite Interfacesmentioning
confidence: 99%
“…Lead halide perovskite (LHP) materials have emerged as a promising light-harvesting semiconductor for single-junction perovskite solar cells (PSCs), achieving a rapid rise in the photoconversion efficiency (PCE) from 3.8% to over 25% since 2009. PSC device architectures exist in both N–I–P and P–I–N configurations, with each type presenting different advantages and challenges. N–I–P device stacks currently have superior PCE but typically use transparent metal oxide layers as electron transport layers (ETLs) that require high-temperature fabrication methods and doped hole transport materials (HTMs) that can introduce device degradation pathways. , P–I–N device stacks can be processed with both ETLs and HTLs deposited at relatively low temperatures by vacuum deposition and solution processing, and generally the HTMs do not require doping. The current state-of-the-art P–I–N device architectures use C 60 or related derivatives as the ETL layer and dopant-free polymeric HTMs such as poly­[bis­(4-phenyl)­(2,4,6-trimethylphenyl)­amine] (PTAA)­or poly­(3-hexylthiophene-2,5,diyl) (P3HT). , The relaxation of temperature requirements allows the use of flexible substrates, opening pathways for highly scalable fabrication methods such as roll-to-roll processing.…”
Section: Introductionmentioning
confidence: 99%