Metal Organic Vapor Phase Epitaxy of ZnO on GaN/Si(111) Using Tertiary-Butanol as O-Precursor

Growth of Heteroepitaxial ZnO Thin Films on GaN‐Buffered Al2O3 (0001) Substrates by Low‐Temperature Hydrothermal Synthesis at 90 °C

“…2 %) with room temperature lattice parameters of a Z = 0.325 nm, c Z = 0.521 nm and a G = 0.319 nm, c G = 0.519 nm, one would expect that ZnO epitaxial thin films on GaN would produce superior properties. Epitaxial ZnO films have been grown on GaN substrates using different vapor-phase methods including metal-organic chemical vapor deposition (MOCVD), [18,19] metal-organic vapor-phase epitaxy, [20][21][22][23][24] pulsed laser deposition (PLD), [25][26][27] and molecular beam epitaxy (MBE). [28][29][30][31] Recently it was shown that lateral epitaxial overgrowth (LEO) of ZnO films on (111) spinel substrates could be accomplished in water at 90°C.…”

Effects of low-temperature-grown ZnO buffer layer and Zn/O ratio on the properties of high-temperature-overgrown ZnO main layer on Si substrate by MBE

“…However, it was difficult to obtain high quality ZnO on Si substrate due to the existence of an oxide layer on Si surface. Some attempts have been made by using AlN [4], MgO [5,6], GaN [7,8] buffer layer and nitridation of Si substrate [9] to solve the oxidation of Si substrate. These techniques introduced foreign atoms in the samples; so low-temperature ZnO buffer layers attracted more attention [10][11][12][13][14].…”

“…These techniques introduced foreign atoms in the samples; so low-temperature ZnO buffer layers attracted more attention [10][11][12][13][14]. As for the fabrication method, different methods such as pulsed laser deposition [6,11], magnetron sputtering [8,12], MOCVD [4,7] and MBE [5,9] were used. Among these methods, MBE method is most promising due to high vacuum and good reproducibility.…”

Growth of dense ZnO films via MOVPE on GaN(0001) epilayers using a low/high-temperature sequence

“…Investigations of the surfaces of ZnO films grown on GaN [16][17][18][19] and sapphire (Al 2 O 3 ) [20][21][22][23] via MOVPE have revealed three-dimensional microstructures containing either hexagonal hillocks or nanowires. More recently it has been shown that the introduction of a low-temperature buffer layer of ZnO followed by high-temperature growth [24,25] of this material can improve the Xray crystallinity, the surface microstructure and the optical properties of the final layer.…”