2015
DOI: 10.1063/1.4916349
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Metal-organic vapor-phase epitaxy-grown ultra-low density InGaAs/GaAs quantum dots exhibiting cascaded single-photon emission at 1.3 μm

Abstract: By metal-organic vapor-phase epitaxy, we have fabricated InGaAs quantum dots on GaAs substrate with an ultra-low lateral density (<107 cm−2). The photoluminescence emission from the quantum dots is shifted to the telecom O-band at 1.31 μm by an InGaAs strain reducing layer. In time-resolved measurements, we find fast decay times for exciton (∼600 ps) and biexciton (∼300 ps). We demonstrate triggered single-photon emission (g(2)(0)=0.08) as well as cascaded emission from the biexciton decay. Our results … Show more

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Cited by 40 publications
(27 citation statements)
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“…The associated photoluminescence (PL) spectrum of the QD at the output of the SPS is shown in the inset of Figure 3a. The emission is centered at 1294.7 nm, and the linewidth equals 0.43 nm which is a typical value for 1.3 µm QDs, [ 18,37 ] where the quite significant inhomogeneous broadening is related mainly to spectral diffusion effects in the case of non‐resonant excitation. At this excitation strength, the total photon flux yields 31 kHz at the device output which, taking into account the 15% probability of multiphoton events, corresponds to a true single‐photon rate of 27 kHz (Figure 3b) according to the study by Pelton et al.…”
Section: Resultsmentioning
confidence: 99%
See 1 more Smart Citation
“…The associated photoluminescence (PL) spectrum of the QD at the output of the SPS is shown in the inset of Figure 3a. The emission is centered at 1294.7 nm, and the linewidth equals 0.43 nm which is a typical value for 1.3 µm QDs, [ 18,37 ] where the quite significant inhomogeneous broadening is related mainly to spectral diffusion effects in the case of non‐resonant excitation. At this excitation strength, the total photon flux yields 31 kHz at the device output which, taking into account the 15% probability of multiphoton events, corresponds to a true single‐photon rate of 27 kHz (Figure 3b) according to the study by Pelton et al.…”
Section: Resultsmentioning
confidence: 99%
“…[ 17 ] Thus QDs constitute superb quantum emitters in terms of scalability, integration, and compatibility with advanced semiconductor technology. [ 18–25 ] A general drawback hindering real‐world applications of In(Ga)As QDs is the cryogenic operation temperature. In fact, this is the main reason why commercially available quantum key distribution systems and experimental quantum networks are almost exclusively based on sources utilizing spontaneous parametric down conversion or attenuated lasers.…”
Section: Introductionmentioning
confidence: 99%
“…Quantum dots in III-V semiconductors are particularly promising quantum emitters that generate single photons with high indistinguishability at nearinfrared wavelengths [13][14][15][16][17][18], and are also compatible with electrical injection [19,20] and integration with nanophotonic structures [21][22][23][24]. A number of works have extended the emission of III-V quantum dots to telecom wavelengths by optimizing materials and growth parameters [25][26][27][28][29][30][31]. However, an on-demand source of indistinguishable single photons remains an outstanding challenge at telecom wavelength.…”
mentioning
confidence: 99%
“…The typical emission wavelength of InAs QDs on GaAs is in the range of 870–1000 nm. However, it was also shown that the emission wavelength can be shifted to 1310 nm or 1550 nm via the use of a strain reducing layer (SRL) or a metamorphic buffer (MMB) approach, respectively. This makes InAs QDs fully compatible with state‐of‐the‐art telecommunication technologies typically operated in the O‐band (1260–1360 nm) and C‐band (1530–1565 nm) were optical fibers provide small transmission losses .…”
Section: Quantum Dots As Nonclassical Light Sourcesmentioning
confidence: 99%