Metal Organic Molecular Beam Epitaxy Growth of Ga_0.5In_0.5P/GaAs Quantum Well Structures

Abstract

High-quality GaAs/GaInP single and multi-quantum-well structures have been grown by metal organic molecular beam epitaxy. Wells as thin as 10 Å have been grown exhibiting confinement energies exceeding 310 meV. The influence of growth interruption at both interfaces has been investigated by low-temperature photoluminescence. The critical role of the relative incorporation kinetics of arsenic and phosphorus atoms in determining the nature of the normal and inverted interfaces defining GaAs quantum wells is shown. An excitonic type recombination is evidenced by low-temperature-dependence photoluminescence measurements. Carrier capture is shown to be very efficient, even for the narrowest wells studied.

X-ray photoemission characterization of interface abruptness and band offset of Ga0.5In0.5P grown on GaAs

“…Diffuse interfaces have been reported for both arsenides on InP 19-21 and phosphides on GaAs. [22][23][24][25][26] However, the origin of interface broadening is not well understood. This is due mainly to the difficulty in distinguishing between intrinsic effects related to the material system under study and extrinsic experimental effects.…”

Photoluminescence up-conversion inGaAs/AlxCheong1, Fluegel2, Hanna3 et al. 1998Phys. Rev. B480421View full textAdd to dashboardCite

“…4 However, problems in the GaAs/͑Al͒Ga x In 1Ϫx P materials system make it unsuitable as the prototypical system to study the physics of UPL: the quality of the GaAs/Ga x In 1Ϫx P interface is strongly dependent on the details of the growth conditions. 15 Since the up-conversion process is thought to be interface-related in both major models, possible variations in the interface quality make it difficult to compare different samples. Also, the spontaneous ordering phenomenon in ͑Al͒Ga x In 1Ϫx P significantly modifies the band structure, and thus influences important parameters such as the band offsets between GaAs and ͑Al͒Ga x In 1Ϫx P, making it difficult to compare different samples.…”

Growth characteristics of hydride-free chemical beam epitaxy and application to GaInP/GaAs heterojunction bipolar transistors

“…The gas-source configuration employed is the following: group III atoms are provided by conventional organometallic sources (triethylgallium [TEGa] and trimethylindium [TMIn]); precracked TBP, TBAs, and uncracked tDMAAs are the group V starting sources. 9 The consumption rate of expensive group V precursors is another important economic factor. All the gas sources are regulated using a two-valve pressure control system.…”