Metal-organic chemical vapor deposition of high quality, high indium composition N-polar InGaN layers for tunnel devices

Lund, Cory; Romanczyk, Brian; Catalano, M.; Wang, Qingxiao; Li, Wenjun; Digiovanni, D.; Kim, Moon J.; Fay, Patrick; Nakamura, Shuji; DenBaars, Steven P.; Mishra, Umesh K.; Keller, S.

doi:10.1063/1.4983300

Cited by 18 publications

(10 citation statements)

References 72 publications

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“…The reversed direction of the internal polarization fields in the ( 0001) N-polar orientation compared with the typical (0001) Ga-polar orientation 27,28) can offer advantages not only for GaN=AlGaN high-electronmobility transistors (HEMTs) [29][30][31] but also for (In,Ga)Nbased light emitters, [32][33][34][35] photodetectors, 36,37) solar cells, 38) and tunnel devices. [39][40][41] In addition, a higher In uptake has been observed in the N-polar growth direction. [42][43][44][45] Herein, we report on the regrowth of InGaN films on N-polar InGaN PSs and compare their properties with those of coloaded films grown on N-polar GaN base layers.…”

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confidence: 96%

Digital growth of thick N-polar InGaN films on relaxed InGaN pseudosubstrates

Lund

Hestroffer

Hatui

et al. 2017

Appl. Phys. Express

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Smooth relaxed N-polar InGaN films were grown by metal–organic CVD (MOCVD) on N-polar InGaN pseudosubstrates (PSs) using a novel digital approach consisting of a constant In precursor flow with the pulsed injection of H2 carrier gas. InGaN layers grown on PSs exhibited an In composition of about 50% higher than those of the layers grown on N-polar GaN templates, assuming the in-plane lattice constant of the relaxed PSs, corresponding to In0.11Ga0.89N. Additionally, the luminescence recorded from InGaN layers grown on PSs at 490 nm was twice as intense as that obtained from the layers deposited on coloaded GaN-on-sapphire templates, which emitted at 430 nm.

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confidence: 96%

Digital growth of thick N-polar InGaN films on relaxed InGaN pseudosubstrates

Lund

Hestroffer

Hatui

et al. 2017

Appl. Phys. Express

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“…The substrate misorientation was previously shown to enable the deposition of high quality N-polar group-III nitride films [12]. Prior to InGaN growth about 2-μm-thick GaN base layers were deposited as reported previously [18,19]. Five period MQW stacks with 2.5-nm-thick In x Ga 1−x N wells and 11-nm-thick GaN barriers were then deposited at 800 °C with a TEGa flow of 1.4 mol min −1 and TEIn and TMIn flows between 2 and 8 μmol min −1 .…”

Section: Methodsmentioning

confidence: 99%

Properties of N-polar InGaN/GaN quantum wells grown with triethyl gallium and triethyl indium as precursors

Lund

Nakamura

DenBaars

et al. 2019

Semicond. Sci. Technol.

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N-polar InGaN/GaN multi quantum wells (MQWs) were grown by metal organic chemical vapor deposition (MOCVD) using a methyl-free process with triethyl gallium (TEGa) and triethyl indium (TEIn) as precursors allowing the demonstration of N-polar (In,Ga)N layers with residual carbon impurity concentrations as low as 2×10 16 cm −3 , which was about one order of magnitude lower compared to samples grown with trimethyl indium (TMIn) as the indium precursor. The residual oxygen concentration in the samples ranged between 3 and 5×10 16 cm −3 . Interestingly the significantly lower carbon content in the samples grown with TEIn resulted only in a slight increase of the quantum well luminescence compared to the samples grown with TMIn. Independent of the indium precursor used, the luminescence of the N-polar MQWs was significantly less intense compared to complimentary Ga-polar samples, which were also grown for comparison.

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“…reported that the residual C concentration is as low as 2 × 10 16 cm -3 using triethylgallium (TEGa) and triethylindium (TEIn) precursors for InGaN MQWs growth [141]. They identified the residual O concentrations of 3−5 × 10 16 cm -3 for N-polar InGaN.…”

Section: Growth Orientationmentioning

confidence: 99%

Recent progress in red light-emitting diodes by III-nitride materials

Iida

Ohkawa

2021

Semicond. Sci. Technol.

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GaN-based light-emitting devices have the potential to realize all visible emissions with the same material system. These emitters are expected to be next-generation red, green, and blue displays and illumination tools. These emitting devices have been realized with highly efficient blue and green light-emitting diodes (LEDs) and laser diodes. Extending them to longer wavelength emissions remains challenging from an efficiency perspective. In the emerging research field of micro-LED displays, III-nitride red LEDs are in high demand to establish highly efficient devices like conventional blue and green systems. In this review, we describe fundamental issues in the development of red LEDs by III-nitrides. We also focus on the key role of growth techniques such as higher temperature growth, strain engineering, nanostructures, and Eu doping. The recent progress and prospect of developing III-nitride-based red light-emitting devices will be presented.

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Metal-organic chemical vapor deposition of high quality, high indium composition N-polar InGaN layers for tunnel devices

Cited by 18 publications

References 72 publications

Digital growth of thick N-polar InGaN films on relaxed InGaN pseudosubstrates

Digital growth of thick N-polar InGaN films on relaxed InGaN pseudosubstrates

Properties of N-polar InGaN/GaN quantum wells grown with triethyl gallium and triethyl indium as precursors

Recent progress in red light-emitting diodes by III-nitride materials

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