Metal-insulator transition-induced electrical oscillation in vanadium dioxide thin film

Lee, Yong Wook; Kim, Bong-Jun; Jungwook, Lim; Yun, Sun Jin; Choi, Sung-Jin; Chae, Byung-Gyu; Kim, Gyoungock; Kim, Hyun-Tak

doi:10.1063/1.2911745

Cited by 97 publications

(78 citation statements)

References 15 publications

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“…The nature of the electronic and structural phase transition has been a matter of research and debate for over three decades, with many recent experiments shedding additional light on the issue 6,7,8,9,10,11,12,13,14,15 . But during this period the hysteretic nature of VO 2 has received much less attention.…”

Section: Introductionmentioning

confidence: 99%

First-order reversal curve measurements of the metal-insulator transition inVO2: Signatures of persistent metallic domains

et al. 2009

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We have performed first order reversal curve measurements of the temperature-driven metalinsulator transition in VO2 thin films, which enable quantitative analysis of the hysteresis behavior. An unexpected tail-like feature in the contour plot of the reversal curve distribution indicates the existence of metallic domains, even at temperatures below the closing of the hysteresis. These domains interact with the surrounding medium and change the reversal path relative to a path from a fully insulating state. With this in mind, and assuming that such interaction persist through the entire phase transition, we develop a model where the driving force (or energy barrier) in charge of opening a hysteresis in VO2 are inter-domain interactions. This model is intrinsically different from the Preisach model usually used to describe hysteresis; given that it looks for the microscopic origin of the hysteresis, and provides physical parameters to characterize it.

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Section: Introductionmentioning

confidence: 99%

First-order reversal curve measurements of the metal-insulator transition inVO2: Signatures of persistent metallic domains

et al. 2009

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“…With the increase of the illumination power, these NDR curves also shrink toward 0 V, and the NDR features gradually disappear. At an illumination power of ~44.7 mW (16.5 dBm), the current jump cannot be found in both measurement mode, just showing an I-V behavior of a standard resistor, which implies that metallic VO 2 grains dominate within the VO 2 film compared with insulating VO 2 grains [13]. Fig.…”

Section: Resultsmentioning

confidence: 99%

High-Performance Optical Gating in Junction Device based on Vanadium Dioxide Thin Film Grown by Sol-Gel Method

Lee¹,

Kim²,

Shin³

et al. 2012

Journal of Electrical Engineering and Technology

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-In this paper, a high-performance optical gating in a junction device based on a vanadium dioxide dioxide (VO 2 ) thin film grown by a sol-gel method was experimentally demonstrated by directly illuminating the VO 2 film of the device with an infrared light at ~1554.6 nm. The threshold voltage of the fabricated device could be tuned by ~76.8 % at an illumination power of ~39.8 mW resulting in a tuning efficiency of ~1.930 %/mW, which was ~4.9 times as large as that obtained in the previous device fabricated using the VO 2 thin film deposited by a pulsed laser deposition method. The rising and falling times of the optical gating operation were measured as ~50 ms and ~200 ms, respectively, which were ~20 times as rapid as those obtained in the previous device.

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“…The NDR happens in the regime of the MIT. 6,[16][17][18] Above I control ¼ 80 lA, the MIT voltage decreases as I control increases, as indicated by the arrow in the figure. Below the voltage of the arrow-crossing point, I in-out behavior is the same as that at the semiconductor transistor, although current gain is much less, approximately 3.…”

Section: -2mentioning

confidence: 92%

Negative-differential-resistance-switching Si-transistor operated by power pulse and identity of Zener breakdown

Kim

2013

Applied Physics Letters

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The identity of Zener breakdown is interpreted as metal-insulator transition (MIT). For a negative-differential-resistance (NDR) Si-transistor as a sort of MIT transistor, a structure of “reverse-pn-junction (insulator role for tunneling) and MIT” is proposed. Its characteristics are investigated through the reverse active mode of a donor-acceptor-donor bipolar transistor, similar to the NDR-transistor structure. As evidence of the MIT at outlet layer, the Ohmic behavior in I-V measurements and the NDR in a 100 KHz power pulse are observed. It switches a much higher current than a bipolar transistor when the MIT occurs and can be used as a power device.

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Metal-insulator transition-induced electrical oscillation in vanadium dioxide thin film

Cited by 97 publications

References 15 publications

First-order reversal curve measurements of the metal-insulator transition inVO2: Signatures of persistent metallic domains

First-order reversal curve measurements of the metal-insulator transition inVO2: Signatures of persistent metallic domains

High-Performance Optical Gating in Junction Device based on Vanadium Dioxide Thin Film Grown by Sol-Gel Method

Negative-differential-resistance-switching Si-transistor operated by power pulse and identity of Zener breakdown

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