Negative-differential-resistance-switching Si-transistor operated by power pulse and identity of Zener breakdown

Abstract

The identity of Zener breakdown is interpreted as metal-insulator transition (MIT). For a negative-differential-resistance (NDR) Si-transistor as a sort of MIT transistor, a structure of “reverse-pn-junction (insulator role for tunneling) and MIT” is proposed. Its characteristics are investigated through the reverse active mode of a donor-acceptor-donor bipolar transistor, similar to the NDR-transistor structure. As evidence of the MIT at outlet layer, the Ohmic behavior in I-V measurements and the NDR in a 100 KHz power pulse are observed. It switches a much higher current than a bipolar transistor when the MIT occurs and can be used as a power device.

Mott transition in chain structure of strained VO2 films revealed by coherent phonons

“…It has been argued whether the IMT is the Mott transition 5 – 10 driven by the breakdown of electron-electron ( e-e ) correlations, the Peierls transition 11 – 13 induced by melting of the charge density wave (CDW) formed by electron-phonon ( e-ph ) interactions, or the Mott-Peierls transition 14 , 15 occurring by means of both effects ( e-e and e-ph ). The microscopic understanding of the e-e and e-ph interactions, regarded as the IMT in doped semiconductors 4 , 16 , Mott insulators 17 , 18 , high temperature superconductors 19 , layered transition metal dichalcogenides 20 , is important for science and technology.…”