Metal–insulator–metal injector for ballistic electron emission spectroscopy

Abstract

Articles you may be interested inBallistic electron emission spectroscopy/microscopy of self-assembled InAs quantum dots of different sizes embedded in GaAs ∕ AlGa As heterostructure Appl. Phys. Lett. 92, 012101 (2008); 10.1063/1.2821846 Study of InAs quantum dots in Al Ga As ∕ Ga As heterostructure by ballistic electron emission microscopy/spectroscopy Appl. Phys. Lett. 91, 042110 (2007); 10.1063/1.2760134Room-temperature ballistic electron emission luminescence spectroscopy with a scanning tunneling microscope

Ballistic transport through GaAs–AlGaAs superlattices in transverse magnetic fields

“…The same behavior was already observed on similar heterostructures investigated earlier. 12 In addition to that, two further features are observable: First, the height of the threshold, which corresponds to the particular tunnel voltage V E where the Fermi level in the emitter is aligned with the bottom of the miniband, is somewhat higher than the result from the self-consistent calculation at flatband condition. This indicates that the acceptor concentration in the p-␦-doped layer of our samples was slightly too high so that the band profile is actually tilted upward for V c ϭ0 V ͑see Fig.…”

“…As spatial resolution is not always required for purely spectroscopic applications, we have developed a device based version of BEES, where ballistic electrons are provided by a metal-insulator-metal ͑MIM͒ tunneling junction. 12 In the literature there are several reports on BEES using devices, such as hot electron transistors on the basis of GaAs-AlGaAs heterostructures ͑''THETA'' devices 13 ͒ or the injector structures introduced by Rauch et al 14 However, all these experiments were carried out on highly specialized molecular beam epitaxy ͑MBE͒ grown structures and, in addition, required an advanced sample processing. In contrast to that, our MIM ͑Al-Al 2 O 3 -Al͒ injector can be used on any substrate material, provided the quality of the Schottky contact between the aluminum base layer and the semiconductor is good enough.…”

Efficient surface-conducted field emission from ZnO nanotetrapods

“…Surface-conducted field emission ͑SCFE͒ also called surface conduction emission is a triode configuration FE, [14][15][16][17] which refers to electron emission from a thin and roughened cathode ͑with current flow͒ where electrons can be easily scattered and extracted by the counter anode. Especially, Canon has showcased a 36 in.…”