Metal-Induced Solid-Phase Crystallization of Amorphous SiGe Films on Insulator

Kanno, Hiroshi; Tsunoda, Isao; Kenjo, Atsushi; Sadoh, Taizoh; Yamaguchi, Shinya; Miyao, Masanobu

doi:10.1143/jjap.42.1933

Cited by 18 publications

(19 citation statements)

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“…Recently, there are also some reports on the synthesis of GeSn [21][22][23] and SiGe [20,24,25]. However, there is no experimental report on the synthesis of SnC.…”

Section: Introductionmentioning

confidence: 99%

First principle and tight-binding study of strained SnC

Moğulkoç

Modarresi

Moğulkoç

et al. 2017

Journal of Physics and Chemistry of Solids

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We study the electronic and optical properties of strained single-layer SnC in the density functional theory (DFT) and tightbinding models. We extract the hopping parameters tight-binding Hamiltonian for monolayer SnC by considering the DFT results as a reference point. We also examine the phonon spectra in the scheme of DFT, and analyze the bonding character by using Mulliken bond population. Moreover, we show that the band gap modulation and transition from indirect to direct band gap in the compressive strained SnC. The applied tensile strain reduces the band gap and eventually the semiconductor to semimetal transition occurs for 7.5% of tensile strain. In the framework of tight-binding model, the effect of spin-orbit coupling on energy spectrum are also discussed. We indicate that while tensile strain closes the band gap, spin-orbit gap is still present which is order of ∼ 40 meV at the Γ point. The substrate effect is modeled through a staggered sub-lattice potential in the tight-binding approximation. The optical properties of pristine and strained SnC are also examined in the DFT scheme. We present the modulation of real and imaginary parts of dielectric function under applied strain.

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“…Recently, there are also some reports on the synthesis of GeSn [21][22][23] and SiGe [20,24,25]. However, there is no experimental report on the synthesis of SnC.…”

Section: Introductionmentioning

confidence: 99%

First principle and tight-binding study of strained SnC

Moğulkoç

Modarresi

Moğulkoç

et al. 2017

Journal of Physics and Chemistry of Solids

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“…However, the regrown regions showed dendritelike morphology. 10 Recently, Yamaguchi et al 11 have reported the enhancement of solid-phase crystallization in the a-Si/ a-Ge layered structures, i.e., nucleation was initiated in a-Ge layers, and the nuclei acted as a seed for crystallization of a-Si layers. This triggered the following idea: If a-Ge/ a-Si layered structures were employed in MILC processing, crystal nucleation should be initiated in a-Ge layers, which would stimulate bond rearrangement in a-Si layers.…”

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confidence: 99%

Modified metal-induced lateral crystallization using amorphous Ge∕Si layered structure

Kanno

Kenjo

Sadoh

et al. 2004

Applied Physics Letters

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Articles you may be interested inNucleation and growth kinetics during metal-induced layer exchange crystallization of Ge thin films at low temperatures J. Appl. Phys. 111, 044908 (2012); 10.1063/1.3682110Self-nucleation free and dimension dependent metal-induced lateral crystallization of amorphous germanium for single crystalline germanium growth on insulating substrate J. Appl. Phys.A model for crystal growth during metal induced lateral crystallization of amorphous silicon Low temperature metal induced crystallization of amorphous silicon using a Ni solution

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“…In our previous study [11][12][13][14] in MILC of SiGe ͑Ge: 40%-60%͒, the dendrite-morphological growth was dominantly observed after 550°C ͑4 h͒ annealing. To understand apparently different results shown in present and previous studies, we speculate that needlelike growth initiates in SiGe-MILC and followed by circular grain growth.…”

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confidence: 85%

“…9,10 Recently, we tried SiGe growth by the MILC method and demonstrated low-temperature ͑Ͻ550°C͒ formation of poly-SiGe with whole Ge compositions ͑0%-100%͒. [11][12][13][14] However, crystalmorphologies after MILC significantly depended on the Ge compositions and annealing temperatures, e.g., the dendrite morphology became dominant for intermediate Ge compositions ͑40%-60%͒ at 550°C. [11][12][13][14] Understanding of such Ge dependent phenomena is essential to apply the MILC for TFT fabrication process.…”

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confidence: 99%