Handbook of Photovoltaic Silicon 2019
DOI: 10.1007/978-3-662-52735-1_23-1
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Metal Impurities and Gettering in Crystalline Silicon

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Cited by 2 publications
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“…Because of B-O defects induce LID (BO-LID), aluminum back surface field (Al-BSF) solar cells and passivated emitter and rear cells (PERC) without performing anti-LID treatment (i.e., regeneration) would suffer an efficiency loss of 3-4% relative and 4-6% relative , respectively [3]. Moreover, since solar-grade crystalline silicon wafers are often polluted by transition metal impurities and these impurities cannot be completely removed or passivated by the subsequent solar cell fabrication processes [4], the LID induced by transition metal impurities generally cannot be neglected [5,6]. Taking Fe-related LID as an example, the dissociation of Fe-B pairs under illumination can result in degradation of short-circuit current (I sc ) and efficiency (η) of the solar cells [6].…”
Section: Introductionmentioning
confidence: 99%
“…Because of B-O defects induce LID (BO-LID), aluminum back surface field (Al-BSF) solar cells and passivated emitter and rear cells (PERC) without performing anti-LID treatment (i.e., regeneration) would suffer an efficiency loss of 3-4% relative and 4-6% relative , respectively [3]. Moreover, since solar-grade crystalline silicon wafers are often polluted by transition metal impurities and these impurities cannot be completely removed or passivated by the subsequent solar cell fabrication processes [4], the LID induced by transition metal impurities generally cannot be neglected [5,6]. Taking Fe-related LID as an example, the dissociation of Fe-B pairs under illumination can result in degradation of short-circuit current (I sc ) and efficiency (η) of the solar cells [6].…”
Section: Introductionmentioning
confidence: 99%