Metal-germanium Schottky barriers

Thanailakis, A.; Northrop, D. C.

doi:10.1016/0038-1101(73)90052-x

Cited by 62 publications

(32 citation statements)

References 17 publications

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“…Although studies have been performed to investigate the relationship between the effective BHs and the ideality factors of metal/Si diodes [2,17,31], and the reactions of germanium (Ge) with nickel (Ni) [32][33][34][35][36][37][38], nothing has yet been reported on the relationship between effective BHs and ideality factors from forward bias currentvoltage (I-V ) and reverse bias capacitance-voltage (C-V ) characteristics of Ni/Ge Schottky diodes. In most previous studies of Ni/Ge, interest has been focused on the formation and the morphology evolution of Ni on n-Ge under rapid thermal annealing.…”

Section: Introductionmentioning

confidence: 99%

Correlation Between Barrier Heights and Ideality Factors of Ni/n-Ge (100) Schottky Barrier Diodes

Chawanda

Nel²,

Auret³

et al. 2010

J. Korean Phy. Soc.

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We computed the homogeneous Schottky barrier height (SBH) at ideality factor (n) = 1.0 of Ni/nGe (100) Schottky diodes (SDs). The SDs were identically prepared by using resistive evaporation of Ni on n-Ge (100). The SBHs and n of these diodes (24 dots) were calculated from their experimental forward bias current-voltage (I-V ) and reverse bias capacitance-voltage (C-V ) measurements at room temperature. Even though the Schottky diodes were identically prepared, the values of the SBH from the I-V characteristics varied from 0.487 to 0.508 eV, the ideality factor varied from 1.34 to 1.53, and the SBH from the C −2 -V characteristics varied from 0.358 to 0.418 eV. The Gaussian fits of the experimental SBH distributions obtained from the C −2 -V and the I-V characteristics yielded mean SBH values of 0.401 ± 0.015 and 0.503 ± 0.006 eV, respectively. Furthermore, a homogeneous SBH value of approximately 0.535 eV was also computed from an extrapolation of a linear plot of the experimental SBHs versus the ideality factors. The homogeneous SBHs, rather than the effective SBHs, of individual contacts or mean values should be used to discuss the theories and the physical mechanisms that determine the SBHs of SDs.

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Section: Introductionmentioning

confidence: 99%

Correlation Between Barrier Heights and Ideality Factors of Ni/n-Ge (100) Schottky Barrier Diodes

Chawanda

Nel²,

Auret³

et al. 2010

J. Korean Phy. Soc.

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“…Lower leakage current is preferable and values below 10 -5 A (diode area dependent) represent high quality Schottky barrier diodes on germanium [10]. Comparing the three deposition methods for Au deposition it is clear (and expected) that resistive evaporation yields the best IV and CV characteristics.…”

Section: Introductionmentioning

confidence: 90%

IV and CV measurements of Schottky diodes deposited on Ge by electron beam and sputter deposition

Coelho

Auret²,

Rensberg

et al. 2008

Phys. Status Solidi (c)

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Various Schottky metal contacts were deposited on bulk grown (111) Sb‐doped n‐type Germanium. The Schottky contacts were deposited by resistive evaporation, electron beam deposition and RF sputter deposition. Current–voltage (IV) and capacitance–voltage (CV) measurements revealed differences in the diode performance that suggested damage caused to the germanium semiconductor crystal by the more energetic deposition methods of electron beam deposition and sputter deposition. Subsequent annealing improved the diode performance thus succeeding in removing some of the defects introduced, but not all. Sputter deposition produced the poorest diodes highlighting this as the most damaging process. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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“…For the HFtreated surface, the conduction and valence band edges experienced an upward bending toward the surface owing to electron trapping by residual surface states near the valence band edge. 29,30 However, the band bending of 0.91 eV for HCl-treated Ge is larger than band gap of Ge (0.68 eV), indicating the effect of another mechanism.…”

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confidence: 91%

Distribution of free carriers near heavily-doped epitaxial surfaces of n-type Ge(100) upon HF and HCl treatments

et al. 2015

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Carrier distributions near n-type epitaxially-grown Ge(100) surfaces with high impurity concentrations (1 × 1020 cm−3) were studied using high resolution electron energy loss spectroscopy (HREELS) upon surface treatments in aqueous solutions of HF and HCl. After surface treatments with HCl and HF, the molecular vibration modes distinctly showed either chloride or hydride terminations of Ge surfaces with negligible oxidation. The free-carrier concentration profile was inferred from the conduction band plasmon measurements as a function of the incident electron energies employing a dielectric theory simulation with a 4-layer structure and an effective electron mass of 0.02m0. A carrier-free layer of 40 and 24 Å were derived for HCl- and HF-treated Ge(100), respectively. The surface band bending was estimated to be 0.32 eV for HF-treated Ge. HCl-treated Ge surfaces showed a band bending of 0.91 eV attributed to the strong effect of the surface Cl-Ge dipole.

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Metal-germanium Schottky barriers

Cited by 62 publications

References 17 publications

Correlation Between Barrier Heights and Ideality Factors of Ni/n-Ge (100) Schottky Barrier Diodes

Correlation Between Barrier Heights and Ideality Factors of Ni/n-Ge (100) Schottky Barrier Diodes

IV and CV measurements of Schottky diodes deposited on Ge by electron beam and sputter deposition

Distribution of free carriers near heavily-doped epitaxial surfaces of n-type Ge(100) upon HF and HCl treatments

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