IV and CV measurements of Schottky diodes deposited on Ge by electron beam and sputter deposition

Coelho, Sergio M.M.; Auret, F.D.; Rensberg, P. J. Janse van; Nyamhere, Cloud; Nel, Jackie M.; Hayes, M.

doi:10.1002/pssc.200776815

Cited by 3 publications

(2 citation statements)

References 9 publications

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“…9 show the previously reported SBH values of various metal/n-Ge contacts. [4][5][6]9,15,[19][20][21][22][23][24][25][26][27][28][29] The broken line indicates the relationship between the SBH and work function of the ideal metal/n-Ge contact assuming the Schottky limit without any FLP phenomenon. As shown in Fig.…”

Section: Interfacial Band Structures Of Metal/n-ge Contactsmentioning

confidence: 99%

Reduction of Schottky barrier height for n-type Ge contact by using Sn electrode

Suzuki

Asaba

Yokoi

et al. 2014

Jpn. J. Appl. Phys.

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We have investigated the electrical properties of the Sn/n-Ge contact and estimated its Schottky barrier height (SBH). We prepared metal/n-Ge Schottky diodes by Sn, Al, and Au deposition on Ge substrates at room temperature. The current density–voltage characteristics of Sn, Al, Au/n-Ge contacts were measured, and the SBHs of these interfaces were estimated to be 0.35, 0.55, and 0.59 eV, respectively. The SBH of Sn/n-Ge contacts increases for samples annealed at 150–220 °C. We have also investigated the crystalline structure of the Sn layer on Ge(001) by X-ray diffraction analysis and examined the relationship between the crystalline structure and the SBH of Sn/Ge contacts. We found that a Sn layer deposited on Ge(001) at room temperature exhibits a preferentially oriented structure. We also performed hard X-ray photoelectron spectroscopy measurement of these metal/n-Ge samples and estimated the energy band bending of Ge near these metal/n-Ge interfaces. We found a small band bending of Ge in the Sn/n-Ge contact, which has a small SBH, in contrast to Au and Al/n-Ge contacts showing large band bending. The small SBH of the Sn/n-Ge contact can be attributed to the small work function of Sn and corresponds well to the SBH expected from the Schottky limit. The Sn/n-Ge contact has the potential to alleviate the Fermi level pinning.

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Section: Interfacial Band Structures Of Metal/n-ge Contactsmentioning

confidence: 99%

Reduction of Schottky barrier height for n-type Ge contact by using Sn electrode

Suzuki

Asaba

Yokoi

et al. 2014

Jpn. J. Appl. Phys.

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“…68 The barrier heights are generally low. Schottky contacts grown on bulk Ge (111) show barrier height of 0.44ev for sputtered Au [74]. As it was already discussed in section 5.2.1.2, barrier height is calculated by finding saturation current from the versus V plot by intercepting the straight line to v = 0 , and fitting it into expression (3.17), which is kT A* ST 2 (p = -In ( ).…”

Section: Interdigitated Electrodesmentioning

confidence: 99%

Germanium-based metal-semiconductor-metal photodetectors for 1.550μm optical communication wavelength

Agha-Mirbaha¹

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Nanoscale Schottky barrier mapping of thermally evaporated and sputter deposited W/Si(001) diodes using ballistic electron emission microscopy

Nolting

Durcan

Narasimham

et al. 2016

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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Ballistic electron emission microscopy has been utilized to demonstrate differences in the interface electrostatics of tungsten-Si(001) Schottky diodes fabricated using two different deposition techniques: thermal evaporation using electron-beam heating and magnetron sputtering. A difference of 70 meV in the Schottky barrier heights is measured between the two techniques for both p- and n-type silicon even though the sum of n- and p-type Schottky barrier heights agrees with the band gap of silicon. Spatially resolved nanoscale maps of the Schottky barrier heights are uniform for the sputter film and are highly disordered for the e-beam film. Histograms of the barrier heights show a symmetric Gaussian like profile for the sputter film and a skewed lognormal distribution for e-beam film. A Monte-Carlo model is developed to simulate these histograms which give strong indication that localized elastic scattering is causing this skewing as forces the hot electrons to need a greater total energy to surmount the barrier. These differences are attributed to silicide formation from the unintentional substrate heating during the e-beam deposition, which is confirmed with transmission electron microscopy.

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IV and CV measurements of Schottky diodes deposited on Ge by electron beam and sputter deposition

Cited by 3 publications

References 9 publications

Reduction of Schottky barrier height for n-type Ge contact by using Sn electrode

Reduction of Schottky barrier height for n-type Ge contact by using Sn electrode

Germanium-based metal-semiconductor-metal photodetectors for 1.550μm optical communication wavelength

Nanoscale Schottky barrier mapping of thermally evaporated and sputter deposited W/Si(001) diodes using ballistic electron emission microscopy

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