Metal–Ferroelectric–Semiconductor Tunnel Junction: Essential Physics and Design Explorations

Feng, Ning; Li, Hao; Peng, Baokang; Zhang, Fangxing; Cai, Puyang; Zhang, Lining; Wang, Runsheng; Huang, Ru

doi:10.1109/ted.2023.3269400

Cited by 1 publication

(1 citation statement)

References 30 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…[2][3][4] Among the various NVMs, ferroelectric (FE) memory devices are promising candidates for achieving highdensity storage and enabling neuromorphic computing, including FE random-access memory, FeFET and FE tunnel junction (FTJ). [5][6][7] Notably, FTJs have attracted great attention due to their simple structure, low power consumption, high processing speed, and non-destructive data readout. [8][9][10] The demand for increased storage density and reduced perunit storage costs has driven the adoption of three-dimensional (3D) storage as a prevailing trend, in which storage cells enable efficient vertical stacking of devices and multilayered storage.…”

Section: Introductionmentioning

confidence: 99%

Performance comparison of planar and cylindrical ferroelectric tunnel junctions

Guo,

Li,

Chang

2024

Jpn. J. Appl. Phys.

View full text Add to dashboard Cite

A comprehensive comparison of the electrical characteristics between the planar (P-FTJ) and cylindrical ferroelectric tunnel junction (C-FTJ) is conducted based on physical modeling and simulation. The FTJ architecture is consisted of metal-ferroelectric-dielectric-metal stacks. Two configurations of C-FTJ are considered depending on whether the position of ferroelectric layer is close or away from the inner electrode. The differences between the P-FTJ and C-FTJs in the distributions of the electric field and ferroelectric polarization are analyzed. The resultant tunneling electroresistance (TER) are explored as a function of the inner radius, ferroelectric thickness, dielectric thickness, and remnant polarization. These simulation results offer physical insights into achieving highly integrated three-dimensional storage structures through improving the TER ratio.

show abstract