Metal contact properties of poly3-octylthiophene thin films

Nanocrystalline Porous Silicon: Structural, Optical, Electrical and Photovoltaic Properties

“…Ohmic behavior Rectifying behavior Height barrier equals to zero (Rhoderick & Williams, 1998;Salinas et al, 2006;Sze, 1990) Barrier height positive and not equal to zero.…”

“…The crystalline silicon industry is mature and manufactures electronic devices, and thus, the M -S interface issues have already been overcome or at least minimized. When a metal and a semiconductor are in intimate contact because the work functions of both materials are different, a built-in barrier is created at their interface (Salinas et al, 2006), which is called a Schottky barrier. The barrier height is directly related to the difference in the Fermi levels between the metal and semiconductor material.…”

“…The barrier opposes the flow of the free charge carriers from one side to another. The electrical behavior of M -S contacts is identified depending on the barrier height (Salinas et al, 2006;Sze, 1990).…”

“…If the Schottky barrier is equal or close to zero, an ohmic contact is expected. The current can flow inside or outside the device with minimum opposition, and the relationship between electrical potential (V) and current (I) is governed by Ohm , s law (Salinas et al, 2006;Sze, 1990), the contact is considered ohmic. If the barrier height is not close to zero, a rectifying contact can be expected.…”

Electrochemical fabrication of p-poly(3-methylthiophene)/n-silicon solar cells

“…A thin Au grid (30 nm) was deposited by sputtering through a mask onto the PMeT film, and also a thin Au film (50 nm) was sputtered onto the bottom of Si wafer. Au electrode to the PMeT films showed Ohmic characteristics [18]. In control experiments, the PMeT layers of the devices were de-doped in hydrazine hydrate after electrochemical deposition, and Au electrodes were fabricated under the same conditions as described above.…”