Ultrathin Cu(In,Ga)Se2 (CIGSe) solar cells
can be fabricated
using various back contact materials. Among those back contact materials,
transparent conductive oxides have enabled a lot of applications in
semitransparent ultrathin (STUT) CIGSe solar cells. Especially, tin-doped
indium oxide (ITO) has been used as a back contact material to fabricate
STUT CIGSe solar cells because of its high transparency and conductivity.
However, the CIGSe absorber layer deposited on ITO substrates is known
to form an undesirable GaO
x
layer at high
processing temperatures owing to Ga diffusion. To improve the back
contact properties at the CIGSe and ITO interface, sulfur treatment
of the ITO back electrode was conducted. Its rear-side interface analysis
indicated that the GaO
x
interfacial layer
changed to a mixed interfacial layer upon undergoing sulfur treatment,
wherein the GaS
x
and GaO
x
phases were formed at the CIGSe/ITO rear-side interface. A
fundamental investigation of the material properties implied that
GaO
x
and GaS
x
have different energy band alignments at the rear-side interface
and that GaS
x
can be more helpful for
hole extraction than the GaO
x
phase. After
fabrication of the STUT CIGSe solar cell, the power conversion efficiency
with an optimal sulfur-treatment time of 5 min increased to 9.0% while
that of the control solar cell on bare ITO (i.e., without sulfur treatment)
remained at 7.0%. The results suggested that the composition and characteristics
of the interfacial layer had a substantial impact on the photovoltaic
properties of the STUT CIGSe solar cells.