Mercuric iodide for room temperature radiation detectors. Synthesis, purification, crystal growth and defect formation

TlHgInS3: An Indirect-Band-Gap Semiconductor with X-ray Photoconductivity Response

“…However, these materials have their own disadvantages such as poor hole charge transport properties and high cost for CZT single crystals, 7,30-33 phase transitions from red α-phase to yellow β-phase over ~127 o C for HgI 2 , 34 and polarization for TlBr. 35 Because of these issues, new superior detector grade materials are in demand.…”

Textured α-HgI2 ceramics for sensitive X-ray detection

“…Most studies on α-HgI 2 , whether fundamental or as a potential ionizing radiation detector were performed on single crystals [9][10][11][12][13]. However, growing single crystals with homogeneous and reproducible detection performances turned to be a very difficult task [14][15][16][17][18].…”

Coplanar-grid electrode design of HgI2 detector by finite elements simulation

“…Mercuric iodide (HgI 2 ) is one of the most suitable semiconductor materials for γ-ray and X-ray detectors operating at room temperature because of its favorable characteristics, such as high atomic number of its constituent elements and large band gap (2.13 eV), resulting in a high photopeak efficiency [1][2][3]. High-energy radiation detectors have high resolution ability to γ-ray and X-ray at room temperature, which were fabricated with HgI 2 [4][5][6][7].…”