Meniscus-Mask Lithography for Narrow Graphene Nanoribbons

Abramova, Vera; Slesarev, Alexander S.; Tour, James M.

doi:10.1021/nn403057t

Cited by 59 publications

(51 citation statements)

References 29 publications

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“…To date, the best known methods for synthesizing quasi-one dimensional graphene nanostructures include the following primary categories: [1] The top-down approach, which utilizes lithographic techniques to produce GNRs from two-dimensional graphene sheets on a substrate. The quantities of GNRs thus produced are limited due to the time consuming lithographic processes, and the edges of these GNRs are usually jagged [25,26]. [2] The bottom-up approach, which may be further divided into the surface-assisted [27,28] and solution-phase synthesized [29e35] approaches.…”

Section: Introductionmentioning

confidence: 99%

High-yield single-step catalytic growth of graphene nanostripes by plasma enhanced chemical vapor deposition

Hsu

Bagley

Teague

et al. 2018

Carbon

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a b s t r a c tWe report a single-step growth process of graphene nanostripes (GNSPs) by adding certain substituted aromatics (e.g., 1,2-dichlorobenzene) as precursors during the plasma enhanced chemical vapor deposition (PECVD). Without any active heating and by using low plasma power ( 60 W), we are able to grow GNSPs vertically with high yields up to (13 ± 4) g/m 2 in 20 min. These GNSPs exhibit high aspect ratios (from 10:1 to >~130:1) and typical widths from tens to hundreds of nanometers on various transitionmetal substrates. The morphology, electronic properties and yields of the GNSPs can be controlled by the growth parameters (e.g., the species of seeding molecules, compositions and flow rates of the gases introduced into the plasma, plasma power, and the growth time). Studies of the Raman spectra, scanning electron microscopy images, ultraviolet photoelectron spectroscopy, transmission electron microscopy images, energy-dispersive x-ray spectroscopy and electrical conductivity of these GNSPs as functions of the growth parameters confirm high-quality GNSPs with electrical mobility~10 4 cm 2 /V-s. These results together with residual gas analyzer spectra and optical emission spectroscopy taken during PECVD growth suggest the important roles of both substituted aromatics and hydrogen plasma in the rapid vertical growth of GNSPs with large aspect ratios.

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Section: Introductionmentioning

confidence: 99%

High-yield single-step catalytic growth of graphene nanostripes by plasma enhanced chemical vapor deposition

Hsu

Bagley

Teague

et al. 2018

Carbon

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“…[ 115 ] They demonstrated anisotropic etching of SLG by thermally activated nickel nanoparticles in a H 2 atmosphere at 1000 °C, as illustrated in Figure 13 a. The crystallographically oriented cuts in SLG oriented at the same edge-chirality (60° or 120°) ( Figure 13 The characteristic width via different fabrication methods, including patterning graphene, [ 20,37,[39][40][41][42][43]46,47,54,57,59,62,63 ] unzipping CNTs, [ 34,65,68,71 ] template growth [72][73][74] and solution/ surface-assisted synthesis. [ 20,78,79,81,[83][84][85][86][87][88] (17 of 31) 1500456 wileyonlinelibrary.com REVIEW connected nanostructured graphene with width lower than 10 nm.…”

Section: Edge Controlmentioning

confidence: 99%

“…Top-down lithography methods based on defi ned masks are the most feasible and convenient way to fabricate nanostructured graphene from large-area graphene fi lms with facile device placement and device addressing. [ 20,[37][38][39][40][41][42][43][44][45] The modes labeled with R, E, and L represent the RBLM, the graphene E 2g -like mode, and the localized mode, respectively. c) The RBLM of all calculated CNRs with H saturation.…”

Section: Nano-masking Lithographymentioning

confidence: 99%

Controllable Fabrication of Nanostructured Graphene Towards Electronics

Zeng

Xiao

Liu

et al. 2016

Adv Elect Materials

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applications, especially for fi eld-effect transistors (FETs) and sensors. [3][4][5][6] However, Klein tunneling in graphene and the related electron confi nement represent a real barrier to the development of graphene-based transistors, which results in a lack of band gap and the inability to confi ne electrons. [ 7 ] Therefore, although high mobility and high current are essential for high-frequency applications, this intrinsically high off-state current and low on/off ratio hinder the potential applications of graphene in FETs operated at room temperature.Numerous efforts have been devoted to inducing a band gap in graphene by chemical modifi cation, [8][9][10] the application of a perpendicular electric fi eld to bilayer graphene, [11][12][13] and other methods. [ 14 ] Nevertheless, these methods are uncontrollable and the as-constructed devices usually exhibit poor electronic performance. The fabrication of nanostructured graphene can be a quite effective way to introduce a bandgap. [ 15 ] Generally, nanostructured graphene refers to a graphene structure of intermediate size between microscopic and molecular, in which one dimension must be at the nanoscale, including graphene nanoribbons (GNRs), graphene nanomeshes, graphene nanodisks, graphene quantum dots, graphene nanoheterostructures, and so on. Among those graphene nanostructures, GNRs are the most popular and potentially useful ones for electronic applications; therefore, we will mainly concentrate on the progress made in GNRs. The narrowing of graphene fi lm into stripes with widths <10 nm was studied both theoretically and experimentally to create an energy band in the electronic structure of graphene due to quantum confi nement, which is the most effective way to open the band gap of graphene. In fact, the band gap is determined by the states of the edge and the width of the nanoribbon. [ 15 ] Tight binding (TB) calculations predict that GNRs terminated with 'armchair' edges can be either metallic or semi-conducting depending on their widths. Nanoribbons terminated with 'zigzag' edges are always metallic regardless of their widths. In order for the GNRs to open band gaps of a similar order as commonly used semiconducting materials (e.g. Si (1.14 eV), GaAs (1.43 eV)) widths of less than 2 nm are likely to be necessary. [ 16 ] Therefore, as the fi rst step to implement the electronic applications, nanostructured graphene must be directly synthesized Due to graphene's exceptional electronic properties, strong efforts are being made to push forward its nanoelectronic applications. However, the gapless band structure of truly 2D graphene makes it unsuitable for direct use in graphene-based fi eld-effect transistors (FETs), which is one of the most widely discussed graphene applications in electronics. Therefore, in order to accomplish graphene's applications in semiconducting nanoelectronics, it is necessary to produce nanostructured graphene with suffi ciently narrow characteristic width, thus introducing further confi nement and opening a reasonably la...

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“…ESσ↓ is located near the Fermi level in the band gap of π-band [8,9] in the narrow GNR. (A GNR with dozen nanometer width is created from an unzipping carbon nanotube [10] or by using a meniscus-mask lithography method [11]. )…”

Section: Introductionmentioning

confidence: 99%

Conduction and Spin Transport via Edge States in Randomly Hydrogenated Graphene Nano-Ribbon

Inuzuka

Honda²,

Sano³

2015

Proceedings of Computational Science Workshop 2014 (CSW2014)

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An edge state of σ-band of minority spin channel is developed in the band gap in a non-hydrogenated graphene nano-ribbon (GNR). The spin-resolved conductance via this edge state in the metal/ graphene/ metal junctions is analyzed by using the tight-binding approach. This conductance exponentially decreases with increasing hydrogenation at the edge of GNR. When the hydrogenation percentages at the edge are lesser than 70 %, the spin-polarized conductance is produced. The spin-polarizability approaches -1 as the difference of hydrogenation percentages at two edges increase.

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Meniscus-Mask Lithography for Narrow Graphene Nanoribbons

Cited by 59 publications

References 29 publications

High-yield single-step catalytic growth of graphene nanostripes by plasma enhanced chemical vapor deposition

High-yield single-step catalytic growth of graphene nanostripes by plasma enhanced chemical vapor deposition

Controllable Fabrication of Nanostructured Graphene Towards Electronics

Conduction and Spin Transport via Edge States in Randomly Hydrogenated Graphene Nano-Ribbon

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