MEMS Thermocouple Sensor Based on 4H-Silicon-Carbide-On-Insulator (4H-SiCOI)

Lv, Yudong; Yi, Ailun; Wang, Yi; Zhou, Hong; Ou, Xin; Li, Tie

doi:10.1109/jsen.2022.3181046

Cited by 4 publications

(2 citation statements)

References 29 publications

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“…In these cases, the same process is used, with the difference that the ion implantation of hydrogen at a controlled depth on the monolithic SiC substrate on which the epitaxial 4H or 6H SiC was grown is utilized to detach the SiC layer after wafer bonding and obtain the desired SiC/SiO 2 stack for the MEMS fabrication [ 156 ]. Using this method, or, in some cases, bulk micromachining techniques from SiC substrates, several MEMS applications have been addressed using 4H- and 6H-SiC, such as pressure sensors [ 157 ], thermal sensors [ 158 ], accelerometers [ 159 ], mechanical resonators [ 160 , 161 , 162 ], and gyroscopes [ 163 ].…”

Section: Sic Memsmentioning

confidence: 99%

Emerging SiC Applications beyond Power Electronic Devices

et al. 2023

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In recent years, several new applications of SiC (both 4H and 3C polytypes) have been proposed in different papers. In this review, several of these emerging applications have been reported to show the development status, the main problems to be solved and the outlooks for these new devices. The use of SiC for high temperature applications in space, high temperature CMOS, high radiation hard detectors, new optical devices, high frequency MEMS, new devices with integrated 2D materials and biosensors have been extensively reviewed in this paper. The development of these new applications, at least for the 4H-SiC ones, has been favored by the strong improvement in SiC technology and in the material quality and price, due to the increasing market for power devices. However, at the same time, these new applications need the development of new processes and the improvement of material properties (high temperature packages, channel mobility and threshold voltage instability improvement, thick epitaxial layers, low defects, long carrier lifetime, low epitaxial doping). Instead, in the case of 3C-SiC applications, several new projects have developed material processes to obtain more performing MEMS, photonics and biomedical devices. Despite the good performance of these devices and the potential market, the further development of the material and of the specific processes and the lack of several SiC foundries for these applications are limiting further development in these fields.

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Section: Sic Memsmentioning

confidence: 99%

Emerging SiC Applications beyond Power Electronic Devices

et al. 2023

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“…Due to their excellent photoelectric properties and physicochemical stability, SiC devices have been widely used in many research fields, such as engine turbines [1], sensors [2][3][4], accelerometers [5,6], electronic circuits [7][8][9][10], biomedicine [11], and thermal piezoresistive devices [12,13]. By designing and processing various micro-fine and micronanostructures on SiC wafers, researchers have realized functional applications that are not available in conventional Si-based microelectromechanical systems (MEMS) devices.…”

Section: Introductionmentioning

confidence: 99%

Femtosecond Laser-Induced Phase Transformation on Single-Crystal 6H-SiC

Quan,

Wang,

et al. 2024

Micromachines

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Silicon carbide (SiC) is widely used in many research fields because of its excellent properties. The femtosecond laser has been proven to be an effective method for achieving high-quality and high-efficiency SiC micromachining. In this article, the ablation mechanism irradiated on different surfaces of 6H-SiC by a single pulse under different energies was investigated. The changes in material elements and the geometric spatial distribution of the ablation pit were analyzed using micro-Raman spectroscopy, Energy Dispersive Spectrum (EDS), and an optical microscope, respectively. Moreover, the thresholds for structural transformation and modification zones of 6H-SiC on different surfaces were calculated based on the diameter of the ablation pits created by a femtosecond laser at different single-pulse energies. Experimental results show that the transformation thresholds of the Si surface and the C surface are 5.60 J/cm2 and 6.40 J/cm2, corresponding to the modification thresholds of 2.26 J/cm2 and 2.42 J/cm2, respectively. The Raman and EDS results reveal that there are no phase transformations or material changes on different surfaces of 6H-SiC at low energy, however, decomposition and oxidation occur and then accumulate into dense new phase material under high-energy laser irradiation. We found that the distribution of structural phase transformation is uneven from the center of the spot to the edge. The content of this research reveals the internal evolution mechanism of high-quality laser processing of hard material 6H-SiC. We expect that this research will contribute to the further development of SiC-based MEMS devices.

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