MEMS Process by Film Transfer Using a Fluorocarbon Anti-Adhesive Layer

Schelcher, Guillaume; Brault, Sebastien; Parrain, Fabien; Lefeuvre, Élie; Dufour-Gergam, Elisabeth; Tatoulian, Michaël; Bouville, David; Desgeorges, M.; Verjus, Fabrice; Bosseboeuf, Alain

doi:10.1149/1.3568823

Cited by 5 publications

(2 citation statements)

References 35 publications

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“…In this work we investigate the ion implantation of an ultrathin CF x layer on a Si substrate as a model hydrophobic surface to inhibit nucleation. − The surface hydrophobicity is characterized by static water contact angle (WCA) measurement, and X-ray photoelectron spectroscopy (XPS) and low energy ion scattering (LEIS) analyses further confirm the surface properties of the implanted CF x layer. The ALD Pt process is employed to evaluate the blocking ability and durability against ALD.…”

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confidence: 99%

A Process for Topographically Selective Deposition on 3D Nanostructures by Ion Implantation

Kim¹,

Hashemi²,

Mackus³

et al. 2016

ACS Nano

102

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Area-selective atomic layer deposition (AS-ALD) is attracting increasing interest because of its ability to enable both continued dimensional scaling and accurate pattern placement for next-generation nanoelectronics. Here we report a strategy for depositing material onto three-dimensional (3D) nanostructures with topographic selectivity using an ALD process with the aid of an ultrathin hydrophobic surface layer. Using ion implantation of fluorocarbons (CFx), a hydrophobic interfacial layer is formed, which in turn causes significant retardation of nucleation during ALD. We demonstrate the process for Pt ALD on both blanket and 2D patterned substrates. We extend the process to 3D structures, demonstrating that this method can achieve selective anisotropic deposition, selectively inhibiting Pt deposition on deactivated horizontal regions while ensuring that only vertical surfaces are decorated during ALD. The efficacy of the approach for metal oxide ALD also shows promise, though further optimization of the implantation conditions is required. The present work advances practical applications that require area-selective coating of surfaces in a variety of 3D nanostructures according to their topographical orientation.

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confidence: 99%

A Process for Topographically Selective Deposition on 3D Nanostructures by Ion Implantation

Kim¹,

Hashemi²,

Mackus³

et al. 2016

ACS Nano

102

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“…For example, Al-As-Ga-based LED elements epitaxially grown on a GaAs substrate were transferred and integrated with a Si-based IC drivers by sacrificially layer etching technique [13]. Electroplated Ni microstructures grown on a donor wafer were transferred to a target wafer using a weakly adhesive sublayer between the Ni microstructures and the donor wafer [14]. Polycrystalline silicon infrared bolometers grown on a silicon substrate were transferred to a Si-based IC by sacrificial wafer etching [15].…”

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confidence: 99%

Integration of BST varactors with surface acoustic wave device by film transfer technology for tunable RF filters

Hirano

Kimura

Koutsaroff

et al. 2012

J. Micromech. Microeng.

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This paper presents a film transfer process to integrate barium strontium titanate (BST) metal-insulator-metal (MIM) structures with surface acoustic wave (SAW) devices on a lithium niobate (LN) substrate. A high-quality BST film grown on a Si substrate above 650 • C was patterned into the MIM structures, and transferred to a LN substrate below 130 • C by Ar-plasma-activated Au-Au bonding and the Si lost wafer process. Simple test SAW devices with the transferred BST variable capacitors (VCs) were fabricated and characterized. The resonance frequency of a one-port SAW resonator with the VC connected in series changed from 999 to 1018 MHz, when a dc bias voltage of 3 V was applied to the VC. Although the observed frequency tuning range was smaller than expected due to the degradation of BST in the process, the experimental result demonstrated that a tunable SAW filter with the transferred BST VCs was feasible.

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