A Process for Topographically Selective Deposition on 3D Nanostructures by Ion Implantation

Abstract

Area-selective atomic layer deposition (AS-ALD) is attracting increasing interest because of its ability to enable both continued dimensional scaling and accurate pattern placement for next-generation nanoelectronics. Here we report a strategy for depositing material onto three-dimensional (3D) nanostructures with topographic selectivity using an ALD process with the aid of an ultrathin hydrophobic surface layer. Using ion implantation of fluorocarbons (CFx), a hydrophobic interfacial layer is formed, which in turn causes significant retardation of nucleation during ALD. We demonstrate the process for Pt ALD on both blanket and 2D patterned substrates. We extend the process to 3D structures, demonstrating that this method can achieve selective anisotropic deposition, selectively inhibiting Pt deposition on deactivated horizontal regions while ensuring that only vertical surfaces are decorated during ALD. The efficacy of the approach for metal oxide ALD also shows promise, though further optimization of the implantation conditions is required. The present work advances practical applications that require area-selective coating of surfaces in a variety of 3D nanostructures according to their topographical orientation.

Area-Selective Atomic Layer Deposition of SiO2 Using Acetylacetone as a Chemoselective Inhibitor in an ABC-Type Cycle

“… 11 However, ALD typically leads to deposition on the entire surface, and therefore the process needs to be adapted to enable area-selective deposition. 7 , 12 − 15 To date, most of the efforts in the field of area-selective ALD include substrate patterning steps before the area-selective ALD. 12 , 16 , 17 On the other hand, in self-aligned fabrication, a partially processed device architecture is taken as the starting point, where patterning has been performed in a previous processing step.…”

Conformal Nanocoatings with Uniform and Controllable Thickness on Microstructured Surfaces: A General Assembly Route

“…However, preparation of conformal and thickness‐controllable nanocoatings on microstructured surfaces is more challenging. Recently, area‐selective atomic layer deposition has been developed to realize selective growth of thin films with excellent conformality, atomic scale thickness controllability, and large‐area uniformity . However, this technique requires complex steps and expensive equipment, and is only suitable for the formation of thin film on the nanostructured surfaces.…”

Area Selective Polymer Brush Deposition

“…More recently, plasma‐based processes have demonstrated a potential way to alter surface chemistry and affect ASD. Kim et al showed that ion implanted fluorocarbons could be used as a layer to reduce nucleation during ALD on planar features. Significantly, the process was extended to 3D nanofin structures where Pt deposition was shown on sidewall features while avoiding deposition on horizontal areas.…”