MEMS post-packaging by localized heating and bonding

Liu, Lin

doi:10.1109/6040.883749

Cited by 158 publications

(57 citation statements)

References 48 publications

(43 reference statements)

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“…Nguyen et al [7] heated magnetic materials to high temperature by electromagnetic induction heating to complete the ITO glass anodic bonding within two minutes. Lin [8,9] put forward a variety of other means of local heating, and most of which used polysilicon materials as the heating sources. By theoretical calculations and experiments, Sinder et al [10] came to the conclusion that RTP with the thin film conductor on a silicon substrate in the vertical radio frequency (RF) magnetic field could be achieved.…”

Section: Introductionmentioning

confidence: 99%

Study on localized induction heating for wafer level packaging

Luo

Liu

et al. 2010

Sci. China Technol. Sci.

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Micro-electro-mechanical systems (MEMS) are being developed as a new multi-disciplinary technology, which will undoubtedly have a revolutionary impact on the future of human life. However, with the development of MEMS technology, the packaging has become the main technical obstacle to the commercialization of MEMS. An approach to MEMS packaging by high-frequency electromagnetic induction heating at wafer level is presented in terms of numerical simulation and experimental study. The structure of inductor is firstly designed and optimized. Then the heating situation of PCB board is verified. The results indicate that the heat impact on the chip during the packaging process can be effectively reduced by local induction heating packaging, therefore the thermal stress on the chip is considerably lowered. This method can effectively improve the reliability of the MEMS devices. MEMS packaging, numerical simulation, induction heating, structural optimization Citation:Xi Y Y, Luo X B, Liu W M, et al. Study on localized induction heating for wafer level packaging.

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Section: Introductionmentioning

confidence: 99%

Study on localized induction heating for wafer level packaging

Luo

Liu

et al. 2010

Sci. China Technol. Sci.

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“…That is, only the bonding or packaging area is heated, the other features on the wafer are still kept at a low temperature during the bonding process. In fact, many techniques have been developed for localized heating and bonding, such as resistance heating [5], laser heating [7], microwave heating [8−10], and induction heating [11,12], etc. Induction heating, due to its reliable, selective, accurate and energy-efficient heating in short time, provides many advantages over other localized heating methods and is commonly used for bonding applications.…”

Section: Introductionmentioning

confidence: 99%

Wafer level bonding using localized radio-frequency induction heating

Chen

Liu

et al. 2010

Sci. China Technol. Sci.

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A wafer level bonding technique by localized induction heating has been developed and demonstrated in this paper. A suitable fabrication process scheme has also been established for the localized induction heating and bonding. It takes only about 20 seconds to complete the bonding process. The temperatures of solder loops and the central area of solder loops are above 300°C and below 70°C, respectively. Due to the solder reflow, robust and hermetic glass wafer bonding is accomplished, and the average tensile strength is 6.42 MPa. Under-heated or over-heated bonding has been found to result in cracks at bonding interfaces and sputtering layer, which degrades the bonding qualities. wafer bonding, induction heating, MEMS, MEMS packaging Citation:Chen M X, Liu W M, Xi Y Y, et al. Wafer level bonding using localized radio-frequency induction heating.

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“…This can be achieved either by using an embedded electrical heater incorporated during the MEMS manufacture process [9][10][11][12], requiring a more complex lithographic process; microwave heating [13]; or induction heating [1,14]. An alternative solution is to use localised laser heating.…”

Section: Introductionmentioning

confidence: 99%

Localised laser joining of glass to silicon with BCB intermediate layer

Lorenz

Hand

2009

Microsyst Technol

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The use of a laser to provide localised heating is an ideal solution to the problem of packaging micro-electro-mechanical-systems (MEMS) whilst maintaining a low device temperature to avoid changes in temperature-sensitive materials in the device. In this paper we present localised laser bonding of glass to silicon (normally used as the MEMS substrate) by using a fibre-delivered high power laser diode array to cure an intermediate layer of the thermosetting polymer Benzocyclobutene (BCB). In our experiments, we use two techniques to realise localised heating: one is to use an axicon together with a conventional positive lens to generate a ring focus; the other is to use a scanning focused laser beam. In both cases localised cooling is required to confine the elevated temperatures to the bonding area. Finite Element (FE) simulation indicates that both techniques should keep the temperature in the centre of the package to approximately that of the ambient environment (300 K) during the process. However experiments show that the temperature in the centre of the package rises to a value of around 500K, likely due to poor contact between silicon and cooling sink. Experimentally, we confirmed that either technique can be used to obtain excellent bonding of glass to silicon with leak rate at a level of 10 -10 mbar l s -1 , whilst keeping the centre of device at a lower temperature.

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MEMS post-packaging by localized heating and bonding

Cited by 158 publications

References 48 publications

Study on localized induction heating for wafer level packaging

Study on localized induction heating for wafer level packaging

Wafer level bonding using localized radio-frequency induction heating

Localised laser joining of glass to silicon with BCB intermediate layer

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