MEMS packaging reliability assessment: Residual Gas Analysis of gaseous species trapped inside MEMS cavities

Charvet, Pierre-Louis; Nicolas, P.; Bloch, Didier; Savornin, B.

doi:10.1016/j.microrel.2013.07.021

Cited by 15 publications

(7 citation statements)

References 4 publications

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“…Table 4 shows the parameter values for this study: T = 423, 523, 673, and 773 K. These test temperatures are chosen based on the studies by Ishikawa and Odaka ( 1990 ), Ishikawa et al. ( 1991 ) and Ishikawa and Yoshimura ( 1995 )…”

Section: Resultsmentioning

confidence: 99%

“…Ishikawa and Odaka ( 1990 ), Ishikawa et al. ( 1991 ), Ishikawa and Yoshimura ( 1995 ) indicated that surface treatments and raw material quality (like surface roughness) can improve the outgassing rate substantially. It was also found by Tuller et al.…”

Section: Resultsmentioning

confidence: 99%

“… 1992 ; Ishikawa and Odaka 1990 ; Ishikawa et al. 1991 ; Ishikawa and Yoshimura 1995 ), it is well known that temperature and pressure are dominant factors for the outgassing process (Jousten 1999 ). These phenomena are well described by continuum flow models.…”

Section: Introductionmentioning

confidence: 99%

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Molecular simulation of water vapor outgassing from silica nanopores

Kim

Frijns

Nedea

et al. 2015

Microfluid Nanofluid

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The outgassing problem is solved numerically by molecular dynamics. A slit-shaped nanopore consisting of cavity and channel is built with an implicit tabulated wall potential that describes the water–silicon/silica interaction. A flexible three-point water model is used for the simulation. The effects of varying the system temperature, outlet pressure, geometry, and materials of the nanopore on the outgassing rate are investigated. The results show that the temperature plays an important role in the outgassing rate, while the effect of the outlet pressure is negligible as long as it is in the high to medium vacuum range. The geometry of the channel also has an influence on the outgassing rate, but not as much as the surface material. Three different types of silica materials are tested: silicon, silica-cristobalite (hydrophilic material), and silica-quartz (super hydrophilic material). The fastest outgassing rate is found for a silicon nanopore. It is also found that a thin water film is formed on the surface of the silica-quartz nanopore. This material shows hardly any outgassing of water.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

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Molecular simulation of water vapor outgassing from silica nanopores

Kim

Frijns

Nedea

et al. 2015

Microfluid Nanofluid

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“…The experiment consists in breaking devices placed under ultra-high vacuum in a first test bench, and analyzing with a mass spectrometer the gaseous species released from the tiny cavity during the opening process and flowing through a calibrated diaphragm. The equipment and procedure are described in literature [7].…”

Section: Hermeticity Of the Packagementioning

confidence: 99%

Implantable device including a MEMS accelerometer and an ASIC chip encapsulated in a hermetic silicon box for measurement of cardiac physiological parameter

Souriau

Castagné

Parat

et al. 2014

2014 IEEE 64th Electronic Components and Technology Conference (ECTC)

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The objective of this paper is to present a new technology that integrates a Micro Electro-Mechanical Systems (MEMS) accelerometer and an Application-Specific Integrated Circuit (ASIC) chip encapsulated in a hermetic silicon box that could be embedded in a transvenous cardiac lead in order to sense the endocardial acceleration signal. The originality of the approach consists of using an interposer and a lid, both made of conductive doped silicon to connect the device. The MEMS and the ASIC are attached on the silicon interposer and the silicon lid is bonded using eutectic AuSi ring. The electrical interconnection to the two conductor wires is obtained through the interposer and the lid using the conductivity of doped silicon. The system integration was performed at the wafer level. A test vehicle which allows characterizing the required technologies was designed and manufactured. A technical focus on the most important process steps for the integration is presented and discussed in this paper. This includes interconnection on doped silicon, dies on wafer bonding and wafer to wafer bonding. The hermeticity and biocompatibility encapsulation of the device is also addressed and a prototype which has been designed is described.

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“…In order to help us to understand this issue, Residual Gas Analysis (RGA) [20][21] have been performed on several dies among those previously measured. It turned out that the main residual gas inside the cavity is Helium.…”

Section: Figure 10 Q Factor Measurement After Pad Metallization -mentioning

confidence: 99%