2017
DOI: 10.1002/smll.201603435
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Memristive Devices with Highly Repeatable Analog States Boosted by Graphene Quantum Dots

Abstract: Memristive devices, having a huge potential as artificial synapses for low-power neural networks, have received tremendous attention recently. Despite great achievements in demonstration of plasticity and learning functions, little progress has been made in the repeatable analog resistance states of memristive devices, which is, however, crucial for achieving controllable synaptic behavior. The controllable behavior of synapse is highly desired in building neural networks as it helps reduce training epochs and… Show more

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Cited by 47 publications
(43 citation statements)
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“…However, no obvious advantage can be found over synaptic devices based on bilayer and trilayer structures. Due to a simple structure, oxide single‐layers have also been widely used for synaptic devices, including AlO x , FeO x , HfO x , PrCaMnO x , SrTiO 3 , TaO x , TiO x , WO x , ZnHfO x , ZrHfO x , KNbO 3 , BiFeO 3 , SiO x , and NiO x . The working mechanism of PrCaMnO x ‐based memristive devices is widely attributed to field‐driven oxygen migration and redox reaction at a metal/PrCaMnO x interface .…”
Section: Working Mechanisms Of Memristive Synapsesmentioning
confidence: 99%
“…However, no obvious advantage can be found over synaptic devices based on bilayer and trilayer structures. Due to a simple structure, oxide single‐layers have also been widely used for synaptic devices, including AlO x , FeO x , HfO x , PrCaMnO x , SrTiO 3 , TaO x , TiO x , WO x , ZnHfO x , ZrHfO x , KNbO 3 , BiFeO 3 , SiO x , and NiO x . The working mechanism of PrCaMnO x ‐based memristive devices is widely attributed to field‐driven oxygen migration and redox reaction at a metal/PrCaMnO x interface .…”
Section: Working Mechanisms Of Memristive Synapsesmentioning
confidence: 99%
“…In particular, high yield and low variability are typically required to maximize the computing accuracy of offline training memristive systems, [179,231] and the nonlinearity and asymmetry between increasing/decreasing responses limit the maximum possible accuracy in online training networks. At the device level, the major obstacle is immature memristive device technology, which has a serious effect on the yield, stability, and uniformity of device arrays.…”
Section: Wwwadvelectronicmatdementioning
confidence: 99%
“…Unfortunately, the widely used conductive filament memristors' uncontrollable working mechanism has made this issue more severe and hard to be fixed because of the two-terminal nature. 18,31 Using the gate tuning function, the device variation could be compensated by applying an extra adjusting voltage on the gate terminal. As a proof-of-concept, Fig.…”
Section: Memristive Featuresmentioning
confidence: 99%